Observation of topological Hall effect in antiferromagnetic FeRh film
Noncollinear magnetic structures can give rise to peculiar Hall effects and hold promise for next-generation spintronic devices. We report the observation of the topological Hall effect (THE) through electrical transport measurements in antiferromagnetic B2-ordered FeRh thin films grown by sputterin...
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| Published in | Applied physics letters Vol. 115; no. 2 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Melville
American Institute of Physics
08.07.2019
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| Abstract | Noncollinear magnetic structures can give rise to peculiar Hall effects and hold promise for next-generation spintronic devices. We report the observation of the topological Hall effect (THE) through electrical transport measurements in antiferromagnetic B2-ordered FeRh thin films grown by sputtering techniques on a MgO (001) substrate. Combining with the spin glass behavior below the metamagnetic transition temperature from ferromagnetism to antiferromagnetism, we ascribe THE to the emergence of noncollinear spin texture arising from the competitions among various exchange interactions in the antiferromagnetic state. This observation opens the possibility to discover the topological Hall effect in centrosymmetric antiferromagnets in contrast to the widely reported B20-type chiral magnets, promoting the application of antiferromagnets in spintronic devices. |
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| AbstractList | Noncollinear magnetic structures can give rise to peculiar Hall effects and hold promise for next-generation spintronic devices. We report the observation of the topological Hall effect (THE) through electrical transport measurements in antiferromagnetic B2-ordered FeRh thin films grown by sputtering techniques on a MgO (001) substrate. Combining with the spin glass behavior below the metamagnetic transition temperature from ferromagnetism to antiferromagnetism, we ascribe THE to the emergence of noncollinear spin texture arising from the competitions among various exchange interactions in the antiferromagnetic state. This observation opens the possibility to discover the topological Hall effect in centrosymmetric antiferromagnets in contrast to the widely reported B20-type chiral magnets, promoting the application of antiferromagnets in spintronic devices. |
| Author | Zhang, Sheng Wang, Dunhui Liu, Ronghua Xia, Siyu Cao, Qingqi Du, Youwei |
| Author_xml | – sequence: 1 givenname: Sheng surname: Zhang fullname: Zhang, Sheng organization: 2Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, People's Republic of China – sequence: 2 givenname: Siyu surname: Xia fullname: Xia, Siyu organization: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University – sequence: 3 givenname: Qingqi surname: Cao fullname: Cao, Qingqi organization: 2Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, People's Republic of China – sequence: 4 givenname: Dunhui surname: Wang fullname: Wang, Dunhui organization: 2Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, People's Republic of China – sequence: 5 givenname: Ronghua surname: Liu fullname: Liu, Ronghua organization: 2Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, People's Republic of China – sequence: 6 givenname: Youwei surname: Du fullname: Du, Youwei organization: 2Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, People's Republic of China |
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| Snippet | Noncollinear magnetic structures can give rise to peculiar Hall effects and hold promise for next-generation spintronic devices. We report the observation of... |
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| SubjectTerms | Antiferromagnetism Applied physics Electromagnetism Ferromagnetism Hall effect Magnetism Magnets Spin glasses Substrates Thin films Topology Transition temperature |
| Title | Observation of topological Hall effect in antiferromagnetic FeRh film |
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