MoS2 based dual input logic AND gate

• Published in: AIP advances Vol. 6; no. 12; pp. 125041 - 125041-6
• Main Authors: Martinez, Luis M., Pinto, Nicholas J., Naylor, Carl H., Johnson, A. T. Charlie
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.12.2016; AIP Publishing LLC
• Subjects: Field effect transistors; Gates (circuits); Large scale integration; Logic; Molybdenum disulfide; Semiconductor devices; Silicon nitride
• DOI: 10.1063/1.4971857
• ISSN: 2158-3226

Crystalline monolayers of CVD MoS2 are used as the active semiconducting channel in a split-gate field effect transistor. The device demonstrates logic AND functionality that is controlled by independently addressing each gate terminal with ±10V. When +10V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The ON/OFF ratio of the device was ∼ 35 and the charge mobility using silicon nitride as the gate dielectric was 1.2cm2/V-s and 0.1cm2/V-s in the ON and OFF states respectively. Clear discrimination between the two states was observed when a simple circuit containing a load resistor was used to test the device logic AND functionality at 10Hz. One advantage is that split gate technology can reduce the number of devices required in complex circuits, leading to compact electronics and large scale integration based on intrinsic 2-D semiconducting materials.