Increase in the piezoelectric response of scandium-doped gallium nitride thin films sputtered using a metal interlayer for piezo MEMS

• Published in: Applied physics letters Vol. 114; no. 1
• Main Authors: Uehara, Masato, Mizuno, Takaaki, Aida, Yasuhiro, Yamada, Hiroshi, Umeda, Keiichi, Akiyama, Morito
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 07.01.2019
• Subjects: Aluminum; Applied physics; Electronics; Gallium nitrides; Interlayers; Mechanical systems; Microelectromechanical systems; Piezoelectricity; Polarity; Q factors; Scandium; Single crystals; Thin films; Wurtzite

Wurtzite gallium nitride (GaN) has a polarity along the c-axis and piezoelectric properties the same as aluminum nitride. Since it has a high mechanical quality factor and high output sensitivity, it is expected to perform well in piezo micro-electro-mechanical system devices. This paper demonstrate...