Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

• Published in: Journal of applied physics Vol. 122; no. 14
• Main Authors: Ali, Faizan, Liu, Xiaohua, Zhou, Dayu, Yang, Xirui, Xu, Jin, Schenk, Tony, Müller, Johannes, Schroeder, Uwe, Cao, Fei, Dong, Xianlin
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 14.10.2017
• Subjects: Aluminum oxide; Antiferroelectricity; Applied physics; Electronic devices; Electrostatic discharges; Endurance; Energy; Energy storage; Ferroelectric materials; Hafnium oxide; Induced polarization; Silicon; Thermal stability; Thin films

Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density...