Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy of electroreflectance and electroluminescence. The periodic bands observed in the electroreflectance and electroluminescence spectra in a blue spectral range are caused by inter...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 44; no. 8; pp. 1090 - 1095
Main Authors Avakyants, L. P., Bokov, P. Yu, Chervyakov, A. V., Chuyas, A. V., Yunovich, A. E., Vasileva, E. D., Bauman, D. A., Uelin, V. V., Yavich, B. S.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.08.2010
Springer
Subjects
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Toy industry
Interference Fringe
Doping Impurity
AlGaN Layer
Electroluminescence Spectrum
Cavity Mirror
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Summary:Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy of electroreflectance and electroluminescence. The periodic bands observed in the electroreflectance and electroluminescence spectra in a blue spectral range are caused by interference effects in the structure in general. The emergence of interference fringes in the electroreflection spectra is explained by modulation of built-in electric fields in the active region of the heterostructure. The long-period interference fringes observed in the electroreflectance spectra in a wide spectral range from infrared to ultra-violet allows one to determine the location of the active region of the heterostructure with respect to different reflecting surfaces in the cavity.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610080245