Pyroelectric dependence of atomic layer-deposited Hf0.5Zr0.5O2 on film thickness and annealing temperature

• Published in: Applied physics letters Vol. 119; no. 11
• Main Authors: Lomenzo, Patrick D., Alcala, Ruben, Richter, Claudia, Li, Songrui, Mikolajick, Thomas, Schroeder, Uwe
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 13.09.2021
• Subjects: Annealing; Applied physics; Coefficients; Crystallization; Depolarization; Energy harvesting; Ferroelectric materials; Ferroelectricity; Film thickness; Materials selection; Metallizing

Ferroelectric Hf0.5Zr0.5O2 is a prime candidate material for integrated HfO2-based ferroelectric devices due to its simple composition, low crystallization temperature, and significant remanent polarization. It is particularly promising for integrated pyroelectric devices used in infrared sensing an...