Growth and kinetic Monte Carlo simulation of InAs quantum wires on vicinal substrates
Self-assembled quantum structures have been successfully grown for some time now but control over their uniformity has proven difficult due to the stochastic nature of surface diffusion. We have investigated the effect of vicinal InP(001) substrates on the uniformity of InAs quantum wires grown on I...
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Published in | Journal of crystal growth Vol. 412; pp. 87 - 94 |
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Language | English |
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Elsevier B.V
15.02.2015
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Abstract | Self-assembled quantum structures have been successfully grown for some time now but control over their uniformity has proven difficult due to the stochastic nature of surface diffusion. We have investigated the effect of vicinal InP(001) substrates on the uniformity of InAs quantum wires grown on InGaAlAs lattice-matched to InP using molecular beam epitaxy. Dense quantum wires were grown on both nominally flat and vicinal substrates off-cut by 0.9° toward the [110] direction for comparison. The off-cut angle was chosen to provide terraces which match the orientation and spacing of wires grown on nominally flat substrates. A modest but statistically significant improvement in the size distribution of the wires was observed on vicinal substrates through the analysis of ultrahigh resolution scanning electron micrographs. The interface between the wires and the off-cut substrate was studied using cross-sectional high resolution scanning transmission electron microscopy. In addition, a kinetic Monte Carlo model of epitaxial growth including full strain calculations was developed to further investigate the nucleation process. Using an anisotropic bond model to account for the surface energy of different crystallographic facets, our simulations produced wires similar to those observed experimentally while demonstrating the importance of anisotropic bonding compared to anisotropic diffusion. Growth on vicinal substrates is also simulated here and indicates that off-cut substrates should indeed improve the size distribution of quantum wires under proper growth conditions.
•We grow quantum wires on flat and vicinal substrates.•We observe a small but significant improvement in wire uniformity.•We examine the interface between wires and the off-cut substrate.•We present a kinetic Monte Carlo model of quantum wire growth.•Simulation results predict a clear improvement in uniformity. |
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AbstractList | Self-assembled quantum structures have been successfully grown for some time now but control over their uniformity has proven difficult due to the stochastic nature of surface diffusion. We have investigated the effect of vicinal InP(001) substrates on the uniformity of InAs quantum wires grown on InGaAlAs lattice-matched to InP using molecular beam epitaxy. Dense quantum wires were grown on both nominally flat and vicinal substrates off-cut by 0.9° toward the [110] direction for comparison. The off-cut angle was chosen to provide terraces which match the orientation and spacing of wires grown on nominally flat substrates. A modest but statistically significant improvement in the size distribution of the wires was observed on vicinal substrates through the analysis of ultrahigh resolution scanning electron micrographs. The interface between the wires and the off-cut substrate was studied using cross-sectional high resolution scanning transmission electron microscopy. In addition, a kinetic Monte Carlo model of epitaxial growth including full strain calculations was developed to further investigate the nucleation process. Using an anisotropic bond model to account for the surface energy of different crystallographic facets, our simulations produced wires similar to those observed experimentally while demonstrating the importance of anisotropic bonding compared to anisotropic diffusion. Growth on vicinal substrates is also simulated here and indicates that off-cut substrates should indeed improve the size distribution of quantum wires under proper growth conditions.
•We grow quantum wires on flat and vicinal substrates.•We observe a small but significant improvement in wire uniformity.•We examine the interface between wires and the off-cut substrate.•We present a kinetic Monte Carlo model of quantum wire growth.•Simulation results predict a clear improvement in uniformity. Self-assembled quantum structures have been successfully grown for some time now but control over their uniformity has proven difficult due to the stochastic nature of surface diffusion. We have investigated the effect of vicinal InP(001) substrates on the uniformity of InAs quantum wires grown on InGaAlAs lattice-matched to InP using molecular beam epitaxy. Dense quantum wires were grown on both nominally flat and vicinal substrates off-cut by 0.9[degrees] toward the [110] direction for comparison. The off-cut angle was chosen to provide terraces which match the orientation and spacing of wires grown on nominally flat substrates. A modest but statistically significant improvement in the size distribution of the wires was observed on vicinal substrates through the analysis of ultrahigh resolution scanning electron micrographs. The interface between the wires and the off-cut substrate was studied using cross-sectional high resolution scanning transmission electron microscopy. In addition, a kinetic Monte Carlo model of epitaxial growth including full strain calculations was developed to further investigate the nucleation process. Using an anisotropic bond model to account for the surface energy of different crystallographic facets, our simulations produced wires similar to those observed experimentally while demonstrating the importance of anisotropic bonding compared to anisotropic diffusion. Growth on vicinal substrates is also simulated here and indicates that off-cut substrates should indeed improve the size distribution of quantum wires under proper growth conditions. |
Author | Thompson, David A. Botton, Gianluigi A. Scullion, Andrew |
Author_xml | – sequence: 1 givenname: Andrew surname: Scullion fullname: Scullion, Andrew organization: Department of Materials Science and Engineering, McMaster University, 1280, Main St. W, Hamilton, Ontario, Canada L8S 4L7 – sequence: 2 givenname: David A. surname: Thompson fullname: Thompson, David A. organization: Centre for Emerging Devices and Technology, McMaster University, 1280, Main St. W, Hamilton, Ontario, Canada L8S 4L7 – sequence: 3 givenname: Gianluigi A. surname: Botton fullname: Botton, Gianluigi A. email: gbotton@mcmaster.ca organization: Department of Materials Science and Engineering, McMaster University, 1280, Main St. W, Hamilton, Ontario, Canada L8S 4L7 |
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CitedBy_id | crossref_primary_10_1016_j_bbagen_2020_129671 crossref_primary_10_1002_pssb_202100641 crossref_primary_10_1080_14786435_2020_1821112 crossref_primary_10_1016_j_susc_2019_01_008 crossref_primary_10_1016_j_jcrysgro_2020_125992 crossref_primary_10_1016_j_susc_2017_12_014 |
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Snippet | Self-assembled quantum structures have been successfully grown for some time now but control over their uniformity has proven difficult due to the stochastic... |
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SubjectTerms | A1. Computer simulation A1. Electron microscopy A1. Nanostructures A1. Nucleation A3. Molecular beam epitaxy Anisotropy B2. Semiconducting III–V materials Bonding Computer simulation Indium arsenides Monte Carlo methods Quantum wires Size distribution Variability Wire |
Title | Growth and kinetic Monte Carlo simulation of InAs quantum wires on vicinal substrates |
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