Demonstration of ferroelectricity in ScGaN thin film using sputtering method

• Published in: Applied physics letters Vol. 119; no. 17
• Main Authors: Uehara, Masato, Mizutani, Ryoichi, Yasuoka, Shinnosuke, Shiraishi, Takahisa, Shimizu, Takao, Yamada, Hiroshi, Akiyama, Morito, Funakubo, Hiroshi
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 25.10.2021
• Subjects: Aluminum; Applied physics; Dielectric breakdown; Ferroelectricity; Gallium nitrides; Lattice parameters; Leakage current; Scandium; Silicon substrates; Sputtering; Temperature dependence; Thin films; Wurtzite

It is recently found that wurtzite aluminum nitride exhibits ferroelectricity by alloying with scandium. Because its remanent polarization (Pr) is large, ScxAl1−xN has attracted much attention. Gallium nitride with similar structure and properties is also expected to show ferroelectricity. Herein, S...