Demonstration of ferroelectricity in ScGaN thin film using sputtering method - Uehara, Masato; Mizutani, Ryoichi; Yasuoka, Shinnosuke; Shiraishi, Takahisa; Shimizu, Takao; Yamada, Hiroshi; Akiyama, Morito; Funakubo, Hiroshi (Applied physics letters, 2021)
Keywords: Aluminum; Applied physics; Dielectric breakdown; Ferroelectricity; Gallium nitrides; Lattice parameters; Leakage current; Scandium; Silicon substrates; Sputtering; Temperature dependence; Thin films; Wurtzite