Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures - Watanabe, Kenta; Nozaki, Mikito; Yamada, Takahiro; Nakazawa, Satoshi; Anda, Yoshiharu; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji (Applied physics letters, 2017)
Keywords: Aluminum gallium nitrides; Aluminum oxide; Applied physics; Charge injection; Dielectrics; Gallium nitrides; Immunity; Insulators; Interface reactions; Interface stability; Metal oxide semiconductors; MOS devices; Thermal stability