APA (7th ed.) Citation

Watanabe, K., Nozaki, M., Yamada, T., Nakazawa, S., Anda, Y., Ishida, M., . . . Watanabe, H. (2017). Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures. Applied physics letters, 111(4), . https://doi.org/10.1063/1.4986419

Chicago Style (17th ed.) Citation

Watanabe, Kenta, et al. "Design and Control of Interface Reaction Between Al-based Dielectrics and AlGaN Layer in AlGaN/GaN Metal-oxide-semiconductor Structures." Applied Physics Letters 111, no. 4 (2017). https://doi.org/10.1063/1.4986419.

MLA (9th ed.) Citation

Watanabe, Kenta, et al. "Design and Control of Interface Reaction Between Al-based Dielectrics and AlGaN Layer in AlGaN/GaN Metal-oxide-semiconductor Structures." Applied Physics Letters, vol. 111, no. 4, 2017, https://doi.org/10.1063/1.4986419.