Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

• Published in: Semiconductor science and technology Vol. 24; no. 5; pp. 055006 - 055006 (8)
• Main Authors: Nikitina, I, Vassilevski, K, Horsfall, A, Wright, N, O'Neill, A G, Ray, S K, Zekentes, K, Johnson, C M
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.05.2009; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Surface double layers, schottky barriers, and work functions; Annealing; Phase composition; Schottky barriers; Nickel silicide; XRD; Adhesion; CV characteristic; Silicon carbide; Diffusion barriers; Solid state reaction; Barrier height; IV characteristic; Depth profiles

4H-SiC Schottky diodes with nickel silicide contacts were formed by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by annealing at temperatures between 600 and 750 deg C. It was found that contacts with barrier heights of 1.45 eV which consist mai...