Impact of strain on periodic gain structures in vertical external cavity surface-emitting lasers

• Published in: Applied physics. B, Lasers and optics Vol. 122; no. 10; pp. 1 - 13
• Main Authors: Jasik, Agata, Sokół, Adam Kacper, Broda, Artur, Sankowska, Iwona, Wójcik-Jedlińska, Anna, Wasiak, Michał, Trajnerowicz, Artur, Kubacka-Traczyk, Justyna, Muszalski, Jan
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.10.2016; Springer Nature B.V
• Subjects: Applied physics; Bragg reflectors; Computer simulation; Dislocations; Emission analysis; Engineering; Epitaxial growth; Gallium arsenide; Heterostructures; High resolution; Holes; Laser beams; Lasers; Mathematical models; Microcavities; Misfit dislocations; Molecular beam epitaxy; Molecular structure; Nanocrystals; Optical Devices; Optics; Photonics; Physical Chemistry; Physics; Physics and Astronomy; Quantum Optics; Quantum wells; Radiative recombination; Recombination coefficient; Strain relaxation; Surface emitting lasers; Distribute Bragg Reflector; Misfit Dislocation; Strain Relaxation; Critical Layer Thickness; Output Coupler Transmission

In this article, the impact of strain relaxation on the emission properties of InGaAs/GaAs multiple quantum wells without strain compensation was examined. Structures consisting of different numbers of quantum wells, namely 4, 8, 12 and 16, on top of distributed Bragg reflectors were grown by molecu...