Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing

Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement sy...

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Published inMicromachines (Basel) Vol. 14; no. 11; p. 2053
Main Authors Tian, Fangxin, Wang, Tongqing, Lu, Xinchun
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.11.2023
Subjects
Aluminum
Chemical-mechanical polishing
Design optimization
endpoint detection
Kinematics
Lasers
Methods
Morphology
Nonuniformity
Optical measurement
optical trace
Optics
Process controls
Sensors
Thin films
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Abstract Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement system was developed for a 12-inch CMP tool. Kinematic analysis of the scanning trajectory of the laser device indicated the relative position relationship between the device and the wafer. Average optical data within the wafer described the material removal of metal CMP. Furthermore, optical data and location described the non-uniformity of the entire wafer surface. In this research, the polishing condition and the residual of the wafer edge are characterized by optical trace. Pauta Criterion is used to discriminate the inflexion point of the material interface. The results reveal that the interface capture is accurate and effective.
AbstractList Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement system was developed for a 12-inch CMP tool. Kinematic analysis of the scanning trajectory of the laser device indicated the relative position relationship between the device and the wafer. Average optical data within the wafer described the material removal of metal CMP. Furthermore, optical data and location described the non-uniformity of the entire wafer surface. In this research, the polishing condition and the residual of the wafer edge are characterized by optical trace. Pauta Criterion is used to discriminate the inflexion point of the material interface. The results reveal that the interface capture is accurate and effective.
Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement system was developed for a 12-inch CMP tool. Kinematic analysis of the scanning trajectory of the laser device indicated the relative position relationship between the device and the wafer. Average optical data within the wafer described the material removal of metal CMP. Furthermore, optical data and location described the non-uniformity of the entire wafer surface. In this research, the polishing condition and the residual of the wafer edge are characterized by optical trace. Pauta Criterion is used to discriminate the inflexion point of the material interface. The results reveal that the interface capture is accurate and effective.Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement system was developed for a 12-inch CMP tool. Kinematic analysis of the scanning trajectory of the laser device indicated the relative position relationship between the device and the wafer. Average optical data within the wafer described the material removal of metal CMP. Furthermore, optical data and location described the non-uniformity of the entire wafer surface. In this research, the polishing condition and the residual of the wafer edge are characterized by optical trace. Pauta Criterion is used to discriminate the inflexion point of the material interface. The results reveal that the interface capture is accurate and effective.
Audience Academic
Author Tian, Fangxin
Lu, Xinchun
Wang, Tongqing
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SubjectTerms Aluminum
Chemical-mechanical polishing
Design optimization
endpoint detection
Kinematics
Lasers
Methods
Morphology
Nonuniformity
Optical measurement
optical trace
Optics
Process controls
Sensors
Thin films
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Title Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing
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