Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsometry

• Published in: Journal of applied spectroscopy Vol. 86; no. 2; pp. 276 - 282
• Main Authors: Liang, Yuanlan, Wang, Fangze, Luo, Xuguang, Li, Qingxuan, Lin, Tao, Ferguson, Ian T., Yang, Qingyi, Wan, Lingyu, Feng, Zhe Chuan
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2019; Springer; Springer Nature B.V
• Subjects: Analytical Chemistry; Atomic/Molecular Structure and Spectra; Chemical vapor deposition; Coefficient of variation; Critical point; Gallium arsenide; Indium antimonide; Intermetallic compounds; Investigations; Metalorganic chemical vapor deposition; Optical properties; Organic chemicals; Organic chemistry; Physics; Physics and Astronomy; Refractivity; Spectroellipsometry; Spectroscopy; Stability analysis; Substrates; Temperature; Temperature dependence; Thin films; spectroscopic ellipsometry; refractive index; extinction coefficient; InSb thin fi lm; dielectric function

InSb thin films were grown on GaAs substrates by metal organic chemical vapor deposition (MOCVD) and investigated by temperature-dependent spectroscopic ellipsometry (TD-SE). The refractive index, extinction coefficient, and dielectric function of the InSb films were extracted. The variation of crit...