Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsometry

• Published in: Journal of applied spectroscopy Vol. 86; no. 2; pp. 276 - 282
• Main Authors: Liang, Yuanlan, Wang, Fangze, Luo, Xuguang, Li, Qingxuan, Lin, Tao, Ferguson, Ian T., Yang, Qingyi, Wan, Lingyu, Feng, Zhe Chuan
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2019; Springer; Springer Nature B.V
• Subjects: Analytical Chemistry; Atomic/Molecular Structure and Spectra; Chemical vapor deposition; Coefficient of variation; Critical point; Gallium arsenide; Indium antimonide; Intermetallic compounds; Investigations; Metalorganic chemical vapor deposition; Optical properties; Organic chemicals; Organic chemistry; Physics; Physics and Astronomy; Refractivity; Spectroellipsometry; Spectroscopy; Stability analysis; Substrates; Temperature; Temperature dependence; Thin films; spectroscopic ellipsometry; refractive index; extinction coefficient; InSb thin fi lm; dielectric function
• DOI: 10.1007/s10812-019-00812-6
• ISSN: 0021-9037

InSb thin films were grown on GaAs substrates by metal organic chemical vapor deposition (MOCVD) and investigated by temperature-dependent spectroscopic ellipsometry (TD-SE). The refractive index, extinction coefficient, and dielectric function of the InSb films were extracted. The variation of critical point energies (E 1 , E 1 +Δ 1 , E 2 , E 1 ' ) related to the excited state transitions of InSb and the second energy derivatives of the dielectric function at different temperatures showed that the InSb thin film had high electrical and optical stability at the evaluated temperatures. TD-SE analysis revealed a temperature range suitable for the use of InSb/GaAs-based devices. Beyond 250°C, InSb was heavily oxidized to form a thin In-O layer, causing a pronounced change in the optical constants. The results indicated that optimized InSb thin films grown on GaAs by MOCVD possess good optical and structural properties.