2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

• Published in: Science (American Association for the Advancement of Science) Vol. 373; no. 6561; pp. 1353 - 1358
• Main Authors: Tong, Lei, Peng, Zhuiri, Lin, Runfeng, Li, Zheng, Wang, Yilun, Huang, Xinyu, Xue, Kan-Hao, Xu, Hangyu, Liu, Feng, Xia, Hui, Wang, Peng, Xu, Mingsheng, Xiong, Wei, Hu, Weida, Xu, Jianbin, Zhang, Xinliang, Ye, Lei, Miao, Xiangshui
• Format: Journal Article
• Language: English
• Published: United States The American Association for the Advancement of Science 17.09.2021
• Subjects: Amplifier design; Architecture; Artificial intelligence; Associative memory; Computer architecture; Energy consumption; Ferroelectricity; Hardware; Integration; Lithium; Lithium niobates; Matching; Memory; Neuromorphic computing; Operational amplifiers; Proximity effect (electricity); Selenide; Semiconductor devices; Signal processing; Transistors; Tungsten; Two dimensional materials

Future artificial intelligence applications and data-intensive computations require the development of neuromorphic systems beyond traditional heterogeneous device architectures. Physical separation between a peripheral signal-processing unit and a memory-operating unit is one of the main bottleneck...