Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor
Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display, active matrix organic light emitting display, active matrix liquid crystal dis...
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| Published in | Transactions on electrical and electronic materials Vol. 21; no. 3; pp. 235 - 248 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Seoul
The Korean Institute of Electrical and Electronic Material Engineers (KIEEME)
01.06.2020
한국전기전자재료학회 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1229-7607 2092-7592 |
| DOI | 10.1007/s42341-020-00197-w |
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| Abstract | Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display, active matrix organic light emitting display, active matrix liquid crystal display as well as thin film electronic devices due to their excellent electrical characteristics, such as field effect mobility (
μ
FE
), subthreshold swing (
SS
) and threshold voltage (
V
th
). Researchers from various fields have studied and considered ways to improve
µ
FE
of AOS TFT, which has been studied for 16 years since 2004. Since 2004, mobility has been increased by using various methods, such as designing novel amorphous oxide materials, changing device structures, or adopting new post-treatment. The development of field effect mobility as well as the stability enhancement has been comprehensively reviewed in this report. |
|---|---|
| AbstractList | Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for fl at panel display, active matrix organic light emitting display, active matrix liquid crystal display as well as thin fi lm electronic devices due to their excellent electrical characteristics, such as fi eld eff ect mobility ( μ FE ), subthreshold swing ( SS ) and threshold voltage ( V th ). Researchers from various fi elds have studied and considered ways to improve μ FE of AOS TFT, which has been studied for 16 years since 2004. Since 2004, mobility has been increased by using various methods, such as designing novel amorphous oxide materials, changing device structures, or adopting new post-treatment. The development of field eff ect mobility as well as the stability enhancement has been comprehensively reviewed in this report. KCI Citation Count: 6 Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display, active matrix organic light emitting display, active matrix liquid crystal display as well as thin film electronic devices due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing ( SS ) and threshold voltage ( V th ). Researchers from various fields have studied and considered ways to improve µ FE of AOS TFT, which has been studied for 16 years since 2004. Since 2004, mobility has been increased by using various methods, such as designing novel amorphous oxide materials, changing device structures, or adopting new post-treatment. The development of field effect mobility as well as the stability enhancement has been comprehensively reviewed in this report. |
| Author | Lee, Sang Yeol |
| Author_xml | – sequence: 1 givenname: Sang Yeol surname: Lee fullname: Lee, Sang Yeol email: sylee@cju.ac.kr organization: Department of Semiconductor Engineering, Cheongju University |
| BackLink | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002595295$$DAccess content in National Research Foundation of Korea (NRF) |
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| Keywords | Comprehensive review Mobility Amorphous oxide semiconductor Thin film transistor Stability |
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| PublicationTitle | Transactions on electrical and electronic materials |
| PublicationTitleAbbrev | Trans. Electr. Electron. Mater |
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| Title | Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor |
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