MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor

• Published in: Sensors and actuators. A. Physical. Vol. 342; p. 113647
• Main Authors: Sharma, Nipun, Kumar, Sumit, Gupta, Ankur, Dolmanan, Surani Bin, Patil, Dharmraj Subhash Kotekar, Tan, Swee Tiam, Tripathy, Sudhiranjan, Kumar, Mahesh
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.08.2022; Elsevier BV
• Subjects: 2D Materials; Aluminum gallium nitrides; Chemisorption; Gallium nitrides; GaN; Gas detectors; Gas sensors; High electron mobility transistors; Molybdenum; Molybdenum disulfide; Nitrogen dioxide; Room temperature; Selectivity; Semiconductor devices; Sensors; Temperature; High electron mobility transistors; 2D Materials; GaN; Gas sensors

The ability to monitor toxic gases under room-temperature conditions, with enhanced response and selectivity present in the atmosphere, is still considered as a technical challenge. In this context, we have fabricated AlGaN/GaN high electron mobility transistors (HEMTs) based sensors incorporating m...