Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cells
Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiOx) film are currently of growing interest to reduce recombination at the interface between the metal electrode and the c‐Si substrate. This study focu...
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Published in | Physica status solidi. A, Applications and materials science Vol. 216; no. 10 |
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Main Authors | , , , , , , , |
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Abstract | Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiOx) film are currently of growing interest to reduce recombination at the interface between the metal electrode and the c‐Si substrate. This study focuses on the development of boron‐doped poly‐Si/SiOx structure to obtain a hole selective passivated contact with a reduced recombination current density and a high photo‐voltage potential. The poly‐Si layer is obtained by depositing a hydrogen‐rich amorphous silicon layer by plasma enhanced chemical vapor deposition (PECVD) exposed then to an annealing step. Using the PECVD route enables to single side deposit the poly Si layer, however, a blistering of the layer appears due to its high hydrogen content, which leads to the degradation of the poly‐Si layer after annealing. In this study, the deposition temperature and gas flow ratio used during PECVD step are optimized to obtain blister‐free poly‐Si layer. The stability of the surface passivation properties over time is shown to depend on the blister density. The surface passivation properties are further improved thanks to a post process hydrogenation step. As a result, a mean implied photo‐voltage value of 714 mV is obtained.
Boron‐doped polycrystalline silicon (poly‐Si) layer on a thin silicon oxide layer as a passivating structure for c‐Si solar cells is studied. The deposition conditions are optimized to obtain blister‐free poly‐Si layer. The surface passivation properties of the resulting passivating structure are evaluated in accordance with the blister density and the annealing temperature. Conductive‐AFM measurements are performed to study the charge carrier transport in the structure. |
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AbstractList | Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiO
x
) film are currently of growing interest to reduce recombination at the interface between the metal electrode and the c‐Si substrate. This study focuses on the development of boron‐doped poly‐Si/SiO
x
structure to obtain a hole selective passivated contact with a reduced recombination current density and a high photo‐voltage potential. The poly‐Si layer is obtained by depositing a hydrogen‐rich amorphous silicon layer by plasma enhanced chemical vapor deposition (PECVD) exposed then to an annealing step. Using the PECVD route enables to single side deposit the poly Si layer, however, a blistering of the layer appears due to its high hydrogen content, which leads to the degradation of the poly‐Si layer after annealing. In this study, the deposition temperature and gas flow ratio used during PECVD step are optimized to obtain blister‐free poly‐Si layer. The stability of the surface passivation properties over time is shown to depend on the blister density. The surface passivation properties are further improved thanks to a post process hydrogenation step. As a result, a mean implied photo‐voltage value of 714 mV is obtained. Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiOx) film are currently of growing interest to reduce recombination at the interface between the metal electrode and the c‐Si substrate. This study focuses on the development of boron‐doped poly‐Si/SiOx structure to obtain a hole selective passivated contact with a reduced recombination current density and a high photo‐voltage potential. The poly‐Si layer is obtained by depositing a hydrogen‐rich amorphous silicon layer by plasma enhanced chemical vapor deposition (PECVD) exposed then to an annealing step. Using the PECVD route enables to single side deposit the poly Si layer, however, a blistering of the layer appears due to its high hydrogen content, which leads to the degradation of the poly‐Si layer after annealing. In this study, the deposition temperature and gas flow ratio used during PECVD step are optimized to obtain blister‐free poly‐Si layer. The stability of the surface passivation properties over time is shown to depend on the blister density. The surface passivation properties are further improved thanks to a post process hydrogenation step. As a result, a mean implied photo‐voltage value of 714 mV is obtained. Boron‐doped polycrystalline silicon (poly‐Si) layer on a thin silicon oxide layer as a passivating structure for c‐Si solar cells is studied. The deposition conditions are optimized to obtain blister‐free poly‐Si layer. The surface passivation properties of the resulting passivating structure are evaluated in accordance with the blister density and the annealing temperature. Conductive‐AFM measurements are performed to study the charge carrier transport in the structure. Passivating the contacts of crystalline silicon (c-Si) solar cells with a poly-crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiO x) film are currently of growing interest to reduce recombination at the interface between the metal electrode and the c-Si substrate. This study focuses on the development of boron-doped poly-Si/SiO x structure to obtain a hole selective passivated contact with a reduced recombination current density and a high photo-voltage potential. The poly-Si layer is obtained by depositing a hydrogen-rich amorphous silicon layer by plasma enhanced chemical vapor deposition (PECVD) exposed then to an annealing step. Using the PECVD route enables to single side deposit the poly Si layer, however, a blistering of the layer appears due to its high hydrogen content, which leads to the degradation of the poly-Si layer after annealing. In this study, the deposition temperature and gas flow ratio used during PECVD step are optimized to obtain blister-free poly-Si layer. The stability of the surface passivation properties over time is shown to depend on the blister density. The surface passivation properties are further improved thanks to a post process hydrogenation step. As a result, a mean implied photo-voltage value of 714 mV is obtained. Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiOx) film are currently of growing interest to reduce recombination at the interface between the metal electrode and the c‐Si substrate. This study focuses on the development of boron‐doped poly‐Si/SiOx structure to obtain a hole selective passivated contact with a reduced recombination current density and a high photo‐voltage potential. The poly‐Si layer is obtained by depositing a hydrogen‐rich amorphous silicon layer by plasma enhanced chemical vapor deposition (PECVD) exposed then to an annealing step. Using the PECVD route enables to single side deposit the poly Si layer, however, a blistering of the layer appears due to its high hydrogen content, which leads to the degradation of the poly‐Si layer after annealing. In this study, the deposition temperature and gas flow ratio used during PECVD step are optimized to obtain blister‐free poly‐Si layer. The stability of the surface passivation properties over time is shown to depend on the blister density. The surface passivation properties are further improved thanks to a post process hydrogenation step. As a result, a mean implied photo‐voltage value of 714 mV is obtained. |
Author | Grange, Bernadette Cabal, Raphaël Kleider, Jean‐Paul Alvarez, José Gueunier‐Farret, Marie‐Estelle Marchat, Clément Morisset, Audrey Dubois, Sébastien |
Author_xml | – sequence: 1 givenname: Audrey orcidid: 0000-0003-0878-6725 surname: Morisset fullname: Morisset, Audrey email: audrey.morisset@cea.fr organization: Sorbonne Universités – sequence: 2 givenname: Raphaël surname: Cabal fullname: Cabal, Raphaël organization: Institute of Technologies for New Energies (CEA‐Liten) – sequence: 3 givenname: Bernadette surname: Grange fullname: Grange, Bernadette organization: Institute of Technologies for New Energies (CEA‐Liten) – sequence: 4 givenname: Clément surname: Marchat fullname: Marchat, Clément organization: Sorbonne Universités – sequence: 5 givenname: José surname: Alvarez fullname: Alvarez, José organization: Sorbonne Universités – sequence: 6 givenname: Marie‐Estelle surname: Gueunier‐Farret fullname: Gueunier‐Farret, Marie‐Estelle organization: Sorbonne Universités – sequence: 7 givenname: Sébastien surname: Dubois fullname: Dubois, Sébastien organization: Institute of Technologies for New Energies (CEA‐Liten) – sequence: 8 givenname: Jean‐Paul surname: Kleider fullname: Kleider, Jean‐Paul organization: Sorbonne Universités |
BackLink | https://hal.science/hal-02392467$$DView record in HAL |
BookMark | eNqFkc1OAjEUhRuDiYBuXTdx5QK8nZ8yXSL-YEIiyei6uXQ6sWScYjtgxpWP4DP6JBYhuHTV9vQ7Jzf39EintrUm5JzBkAFEVyvvcRgBywA4xEekyzIeDXjMROdwBzghPe-XAEmajFiXfExsXaxVYzamaSnWBc3XrkSl6Ry9NxtsjK3p3NmVdo3RntqSXltn6-_Pr5sgFnRuqzY8clMZtUX3tvATohtUjaeldVT9MjS3FTo60VXlT8lxiZXXZ_uzT57vbp8m08Hs8f5hMp4NVCxYPCghS1LgmQANuhDxginFVZJikQlkOhGYsYVimBUswaJANWKCZ5COUsFEiTzuk8td7gtWcuXMK7pWWjRyOp7JrQZRLKKEjzYssBc7duXs21r7Ri7t2tVhPBlFkQhb43ESqOGOUs5673R5iGUgt13IbRfy0EUwiJ3h3VS6_YeW8zwf_3l_AMyxksk |
CitedBy_id | crossref_primary_10_1016_j_solmat_2022_111890 crossref_primary_10_1002_pip_3459 crossref_primary_10_1002_solr_202300919 crossref_primary_10_1016_j_solmat_2022_111586 crossref_primary_10_1016_j_solmat_2020_110487 crossref_primary_10_1109_JPHOTOV_2020_3023506 crossref_primary_10_1038_s41598_022_18910_5 crossref_primary_10_1002_pssa_201900321 crossref_primary_10_1007_s00170_023_12172_9 crossref_primary_10_1109_TED_2022_3196327 crossref_primary_10_1063_5_0185379 |
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ContentType | Journal Article |
Copyright | 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Distributed under a Creative Commons Attribution 4.0 International License |
Copyright_xml | – notice: 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim – notice: 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim – notice: Distributed under a Creative Commons Attribution 4.0 International License |
DBID | AAYXX CITATION 7SP 7SR 7U5 8BQ 8FD JG9 L7M 1XC VOOES |
DOI | 10.1002/pssa.201800603 |
DatabaseName | CrossRef Electronics & Communications Abstracts Engineered Materials Abstracts Solid State and Superconductivity Abstracts METADEX Technology Research Database Materials Research Database Advanced Technologies Database with Aerospace Hyper Article en Ligne (HAL) Hyper Article en Ligne (HAL) (Open Access) |
DatabaseTitle | CrossRef Materials Research Database Engineered Materials Abstracts Technology Research Database Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Advanced Technologies Database with Aerospace METADEX |
DatabaseTitleList | CrossRef Materials Research Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Physics |
EISSN | 1862-6319 |
EndPage | n/a |
ExternalDocumentID | oai_HAL_hal_02392467v1 10_1002_pssa_201800603 PSSA201800603 |
Genre | article |
GrantInformation_xml | – fundername: French National Research Agency funderid: ANR‐IEED‐002‐01; ANR‐10‐ITE‐0003; ANR‐17‐CE05‐0035 |
GroupedDBID | .3N .GA 05W 0R~ 10A 1OC 33P 3SF 3WU 4ZD 50Y 50Z 51W 51X 52M 52N 52O 52P 52S 52T 52U 52W 52X 5VS 66C 702 7PT 8-0 8-1 8-3 8-4 8-5 8UM 930 A03 AAESR AAEVG AAHHS AANLZ AAONW AASGY AAXRX AAZKR ABCQN ABCUV ABEML ABIJN ACAHQ ACCFJ ACCZN ACGFS ACIWK ACPOU ACSCC ACXBN ACXQS ADBBV ADEOM ADIZJ ADKYN ADMGS ADZMN AEEZP AEIGN AEIMD AEQDE AEUQT AEUYR AFBPY AFFPM AFGKR AFPWT AFZJQ AHBTC AITYG AIURR AIWBW AJBDE AJXKR ALAGY ALMA_UNASSIGNED_HOLDINGS ALUQN AMBMR AMYDB ATUGU AUFTA AZBYB AZVAB BAFTC BHBCM BMNLL BNHUX BROTX BRXPI BY8 D-E D-F DCZOG DPXWK DR2 DRFUL DRSTM EBS EJD F00 F01 F04 G-S G.N GNP GODZA H.T H.X HBH HGLYW HHY HZ~ IX1 J0M JPC LATKE LAW LC2 LC3 LEEKS LH4 LITHE LOXES LP6 LP7 LUTES LYRES MEWTI MK4 MRFUL MRSTM MSFUL MSSTM MXFUL MXSTM N04 N05 NF~ O66 O9- P2W P2X P4D Q.N Q11 QB0 QRW R.K RNS RWI RX1 RYL SUPJJ V2E W8V W99 WBKPD WGJPS WIH WIK WOHZO WQJ WRC WXSBR WYISQ XG1 XV2 ~IA ~WT .Y3 AAYXX ACBWZ AFFNX ASPBG AVWKF AZFZN BDRZF CITATION LW6 ROL 7SP 7SR 7U5 8BQ 8FD JG9 L7M 1XC VOOES |
ID | FETCH-LOGICAL-c3913-f084506890e0ed93b1cc6c45ad89a1e49a81bc1a8d14addac719680575919fa63 |
IEDL.DBID | DR2 |
ISSN | 1862-6300 |
IngestDate | Tue Oct 15 15:59:50 EDT 2024 Thu Oct 10 19:59:55 EDT 2024 Fri Aug 23 03:08:45 EDT 2024 Sat Aug 24 00:52:30 EDT 2024 |
IsDoiOpenAccess | true |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 10 |
Language | English |
License | Distributed under a Creative Commons Attribution 4.0 International License: http://creativecommons.org/licenses/by/4.0 |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c3913-f084506890e0ed93b1cc6c45ad89a1e49a81bc1a8d14addac719680575919fa63 |
ORCID | 0000-0003-0878-6725 0000-0003-4388-6326 0000-0003-1615-498X 0000-0003-3558-8302 |
OpenAccessLink | https://hal.science/hal-02392467 |
PQID | 2229045634 |
PQPubID | 1036347 |
PageCount | 6 |
ParticipantIDs | hal_primary_oai_HAL_hal_02392467v1 proquest_journals_2229045634 crossref_primary_10_1002_pssa_201800603 wiley_primary_10_1002_pssa_201800603_PSSA201800603 |
PublicationCentury | 2000 |
PublicationDate | May 22, 2019 |
PublicationDateYYYYMMDD | 2019-05-22 |
PublicationDate_xml | – month: 05 year: 2019 text: May 22, 2019 day: 22 |
PublicationDecade | 2010 |
PublicationPlace | Weinheim |
PublicationPlace_xml | – name: Weinheim |
PublicationTitle | Physica status solidi. A, Applications and materials science |
PublicationYear | 2019 |
Publisher | Wiley Subscription Services, Inc Wiley |
Publisher_xml | – name: Wiley Subscription Services, Inc – name: Wiley |
References | 2018; 186 2018; 185 1980; 127 2018; 187 1987; 61 2018; 178 2016; 31 2007; 91 2017; 173 2016 2015 2016; 92 2016; 158 1991 2014; 120 2014; 131 2017; 214 2017; 159 e_1_2_7_6_1 e_1_2_7_5_1 e_1_2_7_4_1 e_1_2_7_3_1 e_1_2_7_9_1 e_1_2_7_8_1 e_1_2_7_7_1 e_1_2_7_19_1 e_1_2_7_18_1 e_1_2_7_17_1 e_1_2_7_16_1 e_1_2_7_2_1 e_1_2_7_15_1 e_1_2_7_14_1 e_1_2_7_13_1 e_1_2_7_24_1 e_1_2_7_12_1 e_1_2_7_23_1 e_1_2_7_11_1 e_1_2_7_22_1 e_1_2_7_10_1 e_1_2_7_21_1 e_1_2_7_20_1 |
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SSID | ssj0045471 |
Score | 2.3799055 |
Snippet | Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiOx) film... Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiO x ) film... Passivating the contacts of crystalline silicon (c-Si) solar cells with a poly-crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiO x) film... |
SourceID | hal proquest crossref wiley |
SourceType | Open Access Repository Aggregation Database Publisher |
SubjectTerms | Amorphous silicon Annealing Blistering Boron Condensed Matter Crystal structure Crystallinity C‐AFM c‐Si solar cells Electric potential Engineering Sciences Gas flow Hydrogen storage Materials Organic chemistry passivating contacts Passivity Photovoltaic cells Physics Plasma enhanced chemical vapor deposition plasma enhanced chemical vapor deposition (PECVD) poly‐silicon Properties (attributes) Silicon Silicon oxides Silicon substrates Solar cells Surface stability |
Title | Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cells |
URI | https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fpssa.201800603 https://www.proquest.com/docview/2229045634 https://hal.science/hal-02392467 |
Volume | 216 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpZ1bS8MwFMeDDgRfvIvzRhDBp85eki15nFMZojKswt5KkqYojm6sm6BPfgQ_o5_Ec9qtbr4I-ta0CW2TnOSfcPI7hByDCBbcBhZMXGqHGaYdrXni6BjxUJwpGeDh5JvbevuBXXV5d-YUf8GHKDfc0DLy8RoNXOns9BsaOsgy5AZ5ApEiiPtEmh6qoruSH4WwqnzFBbLdQbbUlNro-qfzxedmpcVH9ImcEZyzsjWfdy5XiZp-ceFu8lwbj3TNvP2AOf7nl9bIykSU0mbRi9bJgk03yFLuHGqyTfLW6qeIhc3jTFCVxjQcDxNlLO2A9J6ER6Md3NYfIp-V9hN6hmSEz_ePc7gZ006_9wqJ8KkHHS8ti8ETpGMpM8ooiGdq8jw0xOU2bdleL9siD5cX9622M4nZ4JhAeoGTuIJxty6ka10by0B7xtQN4yoWUnmWSQU62XhKxB6DoVWZBgwBAkWj9GSi6sE2qaT91O4QyhPGjTa-sNYwVwfQhUzMeEMzULFaJFVyMm2zaFCgOaICwuxHWJNRWZNVcgRNWmZCona7eR3hPTzb68Nk8eJVyf60xaOJHWcRRjtH0RuwKvHzpvvlVVEnDJtlavcvhfbIMlxLdFHw_X1SGQ3H9gCUz0gf5r37CxY-_lg |
link.rule.ids | 230,315,786,790,891,1382,27955,27956,46327,46751 |
linkProvider | Wiley-Blackwell |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpZ1Bb9MwFMef2BCCCzBgojDAmpA4ZUtiu7OPpWPqWDdVZJO4WbbjaBNVOjUtEjvxEfiMfBLeS5ps4zIJjnZsJbHfs_-2nn8GeI8iWMnAA7q4dpHwwkXOySJyOeGhpLCa0-Hk45P-6Ex8_irbaEI6C9PwIboNN_KMerwmB6cN6d1rauhlVRE4KFHEFOFrcB99XpJv7n_pCFKEq6rXXCjcI6JLtdzGON29Xf_WvLR2TlGRNyTnTeFazzwHT8C139wEnHzbWS7cjr_6C-f4Xz_1FB6vdCkbNIa0AfdC-Qwe1PGhvnoOV8NZSWTY-qoJZsucZct5YX1gE1TfqxvS2IR29ueEaGWzgn0kOMLvn7_2MTNnk9n0ByayiynaXtlVwycEyLJ-UTHUz8zXZVhGK242DNNp9QLODj6dDkfR6tqGyHOd8KiIlZBxX-k4xCHX3CXe972QNlfaJkFoi1LZJ1blicDR1fo9HAUU6Uad6ML2-Sasl7MyvAQmCyG986kKwYvYcbQinwu55wQKWaeKHnxoO81cNnQO03CYU0MtabqW7ME29mlXiKDao8HYUB4d703Rdr4nPdhqu9ysXLkydOE56V4uepDWfXfHq8wkywZd6tW_VHoHD0enx2MzPjw5eg2PMF9TxEKabsH6Yr4Mb1AILdzb2tT_AP_bAoc |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpZ3NjtMwEMdH7CIQF74RhQUshMQpu0lsZ-1jaakKLKuIsNLeLNtxBKJKq6ZFYk88As_IkzCTtKHLBQmOdmwl8Yztv63xzwAvUAQrGXjALq5dJLxwkXOyilxJeCgprOZ0OPn9aTY9E2_P5fnOKf6OD9FvuFHPaMdr6uCLsjr6DQ1dNA1xgxJFSBG-B1dFxlNafo0_9AApolW1Sy7U7RHBpbbYxjg9ulz_0rS094mCIncU565ubSeeyS2w20_u4k2-HK5X7tBf_EFz_J9_ug03N6qUDTs3ugNXQn0XrrXRob65BxejeU1c2PaiCWbrkhXrZWV9YDlq7839aCynff0lAVrZvGKvCI3w8_uPMWaWLJ_PvmGi-DxDz6v7aviE8FjWrxqG6pn5tgwraL3NRmE2a-7D2eT1x9E02lzaEHmuEx5VsRIyzpSOQxxKzV3ifeaFtKXSNglCWxTKPrGqTASOrdYf4xigSDXqRFc24w9gv57X4SEwWQnpnU9VCF7EjqMP-VLIYydQxjpVDeDl1mZm0bE5TEdhTg21pOlbcgDP0aR9IUJqT4cnhvLocG-Ks8XXZAAHW4ubTUduDF13TqqXiwGkren-8iqTF8WwTz36l0rP4Ho-npiTN6fvHsMNzNYUrpCmB7C_Wq7DE1RBK_e0dfRf_N4BNg |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Conductivity+and+Surface+Passivation+Properties+of+Boron%E2%80%90Doped+Poly%E2%80%90Silicon+Passivated+Contacts+for+c%E2%80%90Si+Solar+Cells&rft.jtitle=Physica+status+solidi.+A%2C+Applications+and+materials+science&rft.au=Morisset%2C+Audrey&rft.au=Cabal%2C+Rapha%C3%ABl&rft.au=Grange%2C+Bernadette&rft.au=Marchat%2C+Cl%C3%A9ment&rft.date=2019-05-22&rft.issn=1862-6300&rft.eissn=1862-6319&rft.volume=216&rft.issue=10&rft.epage=n%2Fa&rft_id=info:doi/10.1002%2Fpssa.201800603&rft.externalDBID=10.1002%252Fpssa.201800603&rft.externalDocID=PSSA201800603 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1862-6300&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1862-6300&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1862-6300&client=summon |