Damage buildup in semiconductors bombarded by low-energy ions

The damage buildup in Ge and GaAs bombarded at room and elevated temperatures by keV Ne + and Ar + ions has been studied. Results show that the accumulation of disorder can be considered as a planar growth of an amorphous layer proceeding from the surface. A retardation of amorphous layer growth is...

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Published inThin solid films Vol. 515; no. 1; pp. 118 - 121
Main Authors Titov, A.I., Belyakov, V.S., Azarov, A.Yu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 25.09.2006
Subjects
Amorphous layers
Damage
Low-energy implantation
Semiconductors
Low-energy implantation
Semiconductors
Damage
Amorphous layers
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Abstract The damage buildup in Ge and GaAs bombarded at room and elevated temperatures by keV Ne + and Ar + ions has been studied. Results show that the accumulation of disorder can be considered as a planar growth of an amorphous layer proceeding from the surface. A retardation of amorphous layer growth is experimentally observed in Ge for low ion doses. Results (for the case of room temperature irradiation of GaAs and for all the cases of irradiation of Ge except for the case of irradiation by Ar + ions with high ion flux density) are explained based on the diffusion of mobile point defects to the surface with a subsequent interface segregation process. Calculations based on this model are in good agreement with experimental data.
AbstractList The damage buildup in Ge and GaAs bombarded at room and elevated temperatures by keV Ne + and Ar + ions has been studied. Results show that the accumulation of disorder can be considered as a planar growth of an amorphous layer proceeding from the surface. A retardation of amorphous layer growth is experimentally observed in Ge for low ion doses. Results (for the case of room temperature irradiation of GaAs and for all the cases of irradiation of Ge except for the case of irradiation by Ar + ions with high ion flux density) are explained based on the diffusion of mobile point defects to the surface with a subsequent interface segregation process. Calculations based on this model are in good agreement with experimental data.
The damage buildup in Ge and GaAs bombarded at room and elevated temperatures by keV Ne(+)and Ar(+)ions has been studied. Results show that the accumulation of disorder can be considered as a planar growth of an amorphous layer proceeding from the surface. A retardation of amorphous layer growth is experimentally observed in Ge for low ion doses. Results (for the case of room temperature irradiation of GaAs and for all the cases of irradiation of Ge except for the case of irradiation by Ar(+)ions with high ion flux density) are explained based on the diffusion of mobile point defects to the surface with a subsequent interface segregation process. Calculations based on this model are in good agreement with experimental data.
Author Titov, A.I.
Belyakov, V.S.
Azarov, A.Yu
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10.1016/0042-207X(95)00072-0
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Issue 1
Keywords Low-energy implantation
Semiconductors
Damage
Amorphous layers
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Snippet The damage buildup in Ge and GaAs bombarded at room and elevated temperatures by keV Ne + and Ar + ions has been studied. Results show that the accumulation of...
The damage buildup in Ge and GaAs bombarded at room and elevated temperatures by keV Ne +and Ar +ions has been studied. Results show that the accumulation of...
The damage buildup in Ge and GaAs bombarded at room and elevated temperatures by keV Ne(+)and Ar(+)ions has been studied. Results show that the accumulation of...
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StartPage 118
SubjectTerms Amorphous layers
Damage
Low-energy implantation
Semiconductors
Title Damage buildup in semiconductors bombarded by low-energy ions
URI https://dx.doi.org/10.1016/j.tsf.2005.12.048
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