Titanium dioxide prepared by APCVD for using as an interfacial layer in polymer solar cells

•TiO2 thin films were grown on ITO using TiCl4.•The growth temperature does not exceed 490°C in any step of the synthesis.•TiO2 films prepared present interesting optical and electrical properties for organic solar cells application.•Increasing in Jsc and η parameters is observed with the insertion...

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Bibliographic Details
Published inJournal of alloys and compounds Vol. 615; pp. S340 - S343
Main Authors Hatem, D., Belkaid, M.S.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Kidlington Elsevier B.V 05.12.2014
Elsevier
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Summary:•TiO2 thin films were grown on ITO using TiCl4.•The growth temperature does not exceed 490°C in any step of the synthesis.•TiO2 films prepared present interesting optical and electrical properties for organic solar cells application.•Increasing in Jsc and η parameters is observed with the insertion of the TiO2 interfacial layer and at first annealing.•Observed similar results can be obtained either by varying the annealing temperature or the annealing time. Titanium dioxide TiO2 thin films have been prepared by APCVD method using TiCl4 as a precursor. The surface morphology of the films deposited was investigated by scanning electron microscopy (SEM). The ellipsometry was used to determinate the refractive index of the films deposited at 490°C and the resistivity was obtained using Hall effect measurement. Transmittance of TiO2 films deposited on ITO was measured by UV–visible spectroscopy. TiO2 films which are prepared during 5min present a resistivity of 4.2×10−4Ωcm, a transmittance higher than 80% and a refractive index of 1,8. These films can be used as interfacial layer in organic solar cells application to minimize the reflectivity and improve solar cells efficiency. Increasing in short-circuit courant density (Jsc) and efficiency (η) parameters is observed with the insertion of the TiO2 interfacial layer after the first annealing.
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content type line 23
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2013.12.031