A new drain engineering structure-SCD-LDD (surface counter doped LDD) for improved hot carrier reliability

A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF 2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the satu...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 32; no. 9A; pp. L1203 - L1205
Main Authors JIH WEN CHOU, CHUN YUN CHANG, LIEN TSE HO, JOE KO, HSUE, P
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.09.1993
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Transistor drain
Field effect transistor
Semiconductor device
Microelectronic fabrication
Ion implantation
Performance characteristic
Hot carrier
MOS transistor
Reliability
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Summary:A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF 2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the saturation drain current was conducted downward away from the maximum electric fields, resulting in a substantial enhancement of hot carrier reliability due to suppression of hot carrier generation and injection with this structure.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.l1203