Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

The electrical properties of p-Si/n-GaAs heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by measuring their current--voltage ($I$--$V$) and capacitance--voltage ($C$--$V$) characteristics. The $I$--$V$ characteristics showed rectifying properties. Their flat-ban...

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Published inApplied physics express Vol. 6; no. 2; pp. 021801 - 021801-3
Main Authors Liang, Jianbo, Miyazaki, Tatsuya, Morimoto, Masashi, Nishida, Shota, Watanabe, Noriyuki, Shigekawa, Naoteru
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.02.2013
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ISSN1882-0778
1882-0786
DOI10.7567/APEX.6.021801

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Abstract The electrical properties of p-Si/n-GaAs heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by measuring their current--voltage ($I$--$V$) and capacitance--voltage ($C$--$V$) characteristics. The $I$--$V$ characteristics showed rectifying properties. Their flat-band voltage obtained from $C$--$V$ measurements was around 1.6 V. Observation by using field-emission-scanning electron microscopy and energy dispersive X-ray spectroscopy revealed neither structural deficits nor oxide layers at the interfaces. These results suggest that the SAB-based Si/GaAs heterojunctions are applicable for fabricating novel devices.
AbstractList The electrical properties of p-Si/n-GaAs heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by measuring their current--voltage ($I$--$V$) and capacitance--voltage ($C$--$V$) characteristics. The $I$--$V$ characteristics showed rectifying properties. Their flat-band voltage obtained from $C$--$V$ measurements was around 1.6 V. Observation by using field-emission-scanning electron microscopy and energy dispersive X-ray spectroscopy revealed neither structural deficits nor oxide layers at the interfaces. These results suggest that the SAB-based Si/GaAs heterojunctions are applicable for fabricating novel devices.
Author Miyazaki, Tatsuya
Liang, Jianbo
Shigekawa, Naoteru
Watanabe, Noriyuki
Morimoto, Masashi
Nishida, Shota
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  organization: Department of Electrical Engineering, Osaka City University, Osaka 558-8585, Japan
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Notes FE-SEM cross-sectional image of the interface of Si/GaAs (a), and EDS composition maps in the GaAs around 2 μm apart from the interface of Si/GaAs (b), on the interface of Si/GaAs (c), and in the Si around 2 μm apart from the interface of Si/GaAs (d). (a) $I$--$V$ characteristic of SAB-based p-Si/n-GaAs junctions measured at room temperature. The inset shows $I$--$V$ characteristic of p-Si/n-GaAs junctions measured at temperatures between 298 and 473 K. (b) $C$--$V$ characteristics of SAB-based p-Si/n-GaAs junctions measured at 298 K. The inset shows the difference in work functions between p-Si and n-GaAs.
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