Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection
Thin films of AlN were deposited at a total gas pressure of 7×10 −4 mbar and a nitrogen partial presure of 9×10 −5 mbar by reactive d.c. magnetron sputtering. Low-carbon steel 08KP, Si (100) wafers and monocrystal KCl were used as substrates. Electron microprobe analysis (EMA), X-ray photoelectron s...
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Published in | Surface & coatings technology Vol. 106; no. 2; pp. 205 - 208 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
04.08.1998
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Subjects | |
Online Access | Get full text |
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