Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection

Thin films of AlN were deposited at a total gas pressure of 7×10 −4 mbar and a nitrogen partial presure of 9×10 −5 mbar by reactive d.c. magnetron sputtering. Low-carbon steel 08KP, Si (100) wafers and monocrystal KCl were used as substrates. Electron microprobe analysis (EMA), X-ray photoelectron s...

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Bibliographic Details
Published inSurface & coatings technology Vol. 106; no. 2; pp. 205 - 208
Main Authors Manova, D., Dimitrova, V., Fukarek, W., Karpuzov, D.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 04.08.1998
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