n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

• Published in: Advanced electronic materials Vol. 10; no. 8
• Main Authors: Kumar, Arun, Pelella, Aniello, Intonti, Kimberly, Viscardi, Loredana, Durante, Ofelia, Giubileo, Filippo, Romano, Paola, Neill, Hazel, Patil, Vilas, Ansari, Lida, Hurley, Paul K., Gity, Farzan, Di Bartolomeo, Antonio
• Format: Journal Article
• Language: English
• Published: Wiley-VCH 01.08.2024
• Subjects: 2D materials; density functional theory; field effect transistor; GaSe; optoelectronic memory; photodetector

The family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabricate a back gated field effect transistor (FET) with n‐type c...