Fabrication and characterization of stress-free microbeams for MEMS applications
The construction of a high sensitivity micro‐accelerometer using the tunnelling/cold‐emission for the displacement measurement of a probe mass is considered. In particular, the fabrication of stress‐free microconsoles based on Ta2O5 or GaAs for accelerometer applications is discussed. The mechanical...
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Published in | Physica status solidi. C Vol. 2; no. 4; pp. 1433 - 1437 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
01.01.2005
WILEY‐VCH Verlag |
Subjects | |
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Abstract | The construction of a high sensitivity micro‐accelerometer using the tunnelling/cold‐emission for the displacement measurement of a probe mass is considered. In particular, the fabrication of stress‐free microconsoles based on Ta2O5 or GaAs for accelerometer applications is discussed. The mechanical properties of these microconsoles are investigated. The microconsoles are positioned near the substrate surface. Additional bending of the consoles was carried out by sputtering of stressed metal layers on the consoles. By varying the thickness of the metal layer, it is possible to precisely adjust the direction and curvature of the bended consoles and, so, the distance to the substrate. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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AbstractList | The construction of a high sensitivity micro-accelerometer using the tunnelling/cold-emission for the displacement measurement of a probe mass is considered. In particular, the fabrication of stress-free microconsoles based on Ta2O5 or GaAs for accelerometer applications is discussed. The mechanical properties of these microconsoles are investigated. The microconsoles are positioned near the substrate surface. Additional bending of the consoles was carried out by sputtering of stressed metal layers on the consoles. By varying the thickness of the metal layer, it is possible to precisely adjust the direction and curvature of the bended consoles and, so, the distance to the substrate. The construction of a high sensitivity micro‐accelerometer using the tunnelling/cold‐emission for the displacement measurement of a probe mass is considered. In particular, the fabrication of stress‐free microconsoles based on Ta2O5 or GaAs for accelerometer applications is discussed. The mechanical properties of these microconsoles are investigated. The microconsoles are positioned near the substrate surface. Additional bending of the consoles was carried out by sputtering of stressed metal layers on the consoles. By varying the thickness of the metal layer, it is possible to precisely adjust the direction and curvature of the bended consoles and, so, the distance to the substrate. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
Author | Lazarev, S. G. Vopilkin, E. A. Shashkin, V. I. Daniltsev, V. M. Rogov, V. V. Klimov, A. Yu Vostokov, N. V. |
Author_xml | – sequence: 1 givenname: V. I. surname: Shashkin fullname: Shashkin, V. I. email: sha@ipm.sci-nnov.ru organization: Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, GSP-105 Russia – sequence: 2 givenname: N. V. surname: Vostokov fullname: Vostokov, N. V. organization: Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, GSP-105 Russia – sequence: 3 givenname: E. A. surname: Vopilkin fullname: Vopilkin, E. A. organization: Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, GSP-105 Russia – sequence: 4 givenname: A. Yu surname: Klimov fullname: Klimov, A. Yu organization: Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, GSP-105 Russia – sequence: 5 givenname: V. M. surname: Daniltsev fullname: Daniltsev, V. M. organization: Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, GSP-105 Russia – sequence: 6 givenname: V. V. surname: Rogov fullname: Rogov, V. V. organization: Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, GSP-105 Russia – sequence: 7 givenname: S. G. surname: Lazarev fullname: Lazarev, S. G. organization: VNIIEF, Sarov, Russia |
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Copyright | Copyright © 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim |
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Title | Fabrication and characterization of stress-free microbeams for MEMS applications |
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