Nanometallic antenna-assisted amorphous silicon waveguide integrated bolometer for mid-infrared

Bolometers are thermal detectors widely applied in the mid-infrared (MIR) wavelength range. In an integrated sensing system on chip, a broadband scalable bolometer absorbing the light over the whole MIR wavelength range could play an important role. In this work, we have developed a waveguide-based...

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Published inOptics letters Vol. 46; no. 3; p. 677
Main Authors Wu, Yangbo, Qu, Zhibo, Osman, Ahmed, Wei, Chen, Cao, Wei, Tarazona, Antulio, Oo, Swe Zin, Chong, Harold M H, Muskens, Otto L, Mashanovich, Goran Z, Nedeljkovic, Milos
Format Journal Article
LanguageEnglish
Published United States 01.02.2021
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Abstract Bolometers are thermal detectors widely applied in the mid-infrared (MIR) wavelength range. In an integrated sensing system on chip, a broadband scalable bolometer absorbing the light over the whole MIR wavelength range could play an important role. In this work, we have developed a waveguide-based bolometer operating in the wavelength range of 3.72-3.88 µm on the amorphous silicon (a-Si) platform. Significant improvements in the bolometer design result in a 20× improved responsivity compared to earlier work on silicon-on-insulator (SOI). The bolometer offers 24.62% change in resistance per milliwatt of input power at 3.8 µm wavelength. The thermal conductance of the bolometer is 3.86×10 / , and an improvement as large as 3 orders magnitude may be possible in the future through redesign of the device geometry.
AbstractList Bolometers are thermal detectors widely applied in the mid-infrared (MIR) wavelength range. In an integrated sensing system on chip, a broadband scalable bolometer absorbing the light over the whole MIR wavelength range could play an important role. In this work, we have developed a waveguide-based bolometer operating in the wavelength range of 3.72-3.88 µm on the amorphous silicon (a-Si) platform. Significant improvements in the bolometer design result in a 20× improved responsivity compared to earlier work on silicon-on-insulator (SOI). The bolometer offers 24.62% change in resistance per milliwatt of input power at 3.8 µm wavelength. The thermal conductance of the bolometer is 3.86×10 / , and an improvement as large as 3 orders magnitude may be possible in the future through redesign of the device geometry.
Author Nedeljkovic, Milos
Wu, Yangbo
Tarazona, Antulio
Qu, Zhibo
Wei, Chen
Chong, Harold M H
Oo, Swe Zin
Mashanovich, Goran Z
Cao, Wei
Muskens, Otto L
Osman, Ahmed
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