The Effect of Furnace Temperature on Evolution of the Microstructure of Type-VIII Clathrate Ba8Ga16Sn30 Polycrystals Grown from Ba8Ga16Sn50 Solutions
Type-VIII Ba 8 Ga 16 Sn 30 polycrystalline clathrates were grown vertically downwards from Ba 8 Ga 16 Sn 50 solution at furnace temperatures between 500°C and 800°C with an ampoule velocity of 0.36 cm/h. The microstructure, composition, crystal structure, and thermoelectric properties of crystals we...
Saved in:
Published in | Journal of electronic materials Vol. 43; no. 6; pp. 1865 - 1869 |
---|---|
Main Authors | , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Boston
Springer US
01.06.2014
Springer |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Type-VIII Ba
8
Ga
16
Sn
30
polycrystalline clathrates were grown vertically downwards from Ba
8
Ga
16
Sn
50
solution at furnace temperatures between 500°C and 800°C with an ampoule velocity of 0.36 cm/h. The microstructure, composition, crystal structure, and thermoelectric properties of crystals were investigated. Polycrystalline samples in which Ba
8
Ga
16
Sn
30
grains were wetted by an Sn-rich phase were prepared. In general, grain size increases along the direction of growth. It was found that the sample grown at 650°C had the largest grains. Smaller grains were observed for samples grown at lower temperatures, as a result of higher rate of nucleation, because of higher undercooling at the solid–liquid interface caused by the lower thermal gradient in the liquid. However, at furnace temperatures higher than 650°C enhanced convection in the solution at higher temperature gradients and wetting phenomena may cause instability of the solid–liquid interface and solid nuclei may flow into the liquid to become new nucleation sites. This explains the decrease of grain size at higher furnace temperatures. The optimum
ZT
and power factor of the undoped Ba
8
Ga
16
Sn
30
clathrate prepared by the vertical Bridgman method in this study were, respectively, 0.8 and 11.4 μW/cmK
2
at 200°C; the Seebeck coefficient was −260 μV/K. |
---|---|
ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-013-2892-5 |