Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

• Published in: Chinese physics B Vol. 25; no. 8; pp. 357 - 360
• Main Author: 张家琦 王磊 李柳暗 王青鹏 江滢 朱慧超 敖金平
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.08.2016
• Subjects: AlGaN/GaN; AlGaN/GaN HFETs; Electrodes; Field effect transistors; Gates; Heterostructures; Inductively coupled plasma; Ohmic; self-aligned-gate; Semiconductor devices; Titanium nitride; wet etching; 异质结场效应晶体管; 栅极; 欧姆接触电极; 欧姆接触电阻; 氮化钛; 等离子体处理; 自对准栅

Self-aligned-gate heterostructure field-effect transistor（HFET） is fabricated using a wet-etching method.Titanium nitride（TiN） is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au cap layer is fixed on the gate and acts as an etching mask.Then the T-shaped gate is a...