Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Self-aligned-gate heterostructure field-effect transistor（HFET） is fabricated using a wet-etching method.Titanium nitride（TiN） is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au cap layer is fixed on the gate and acts as an etching mask.Then the T-shaped gate is a...

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Published inChinese physics B Vol. 25; no. 8; pp. 357 - 360
Main Author 张家琦 王磊 李柳暗 王青鹏 江滢 朱慧超 敖金平
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.08.2016
Subjects
AlGaN/GaN
AlGaN/GaN HFETs
Electrodes
Field effect transistors
Gates
Heterostructures
Inductively coupled plasma
Ohmic
self-aligned-gate
Semiconductor devices
Titanium nitride
wet etching
异质结场效应晶体管
栅极
欧姆接触电极
欧姆接触电阻
氮化钛
等离子体处理
自对准栅
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Summary:Self-aligned-gate heterostructure field-effect transistor（HFET） is fabricated using a wet-etching method.Titanium nitride（TiN） is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au cap layer is fixed on the gate and acts as an etching mask.Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H2O2 solution at 95 ℃.After treating the ohmic region with an inductively coupled plasma（ICP） method,an Al layer is sputtered as an ohmic electrode.The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 ℃ in N2 ambient for 1 min.The TiN gate leakage current is only 10^-8 A after the low-temperature ohmic process.The access region length of the self-aligned-gate（SAG） HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET.The output current density and transconductance of the device which has the same gate length and width are also increased.
Bibliography:Self-aligned-gate heterostructure field-effect transistor（HFET） is fabricated using a wet-etching method.Titanium nitride（TiN） is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au cap layer is fixed on the gate and acts as an etching mask.Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H2O2 solution at 95 ℃.After treating the ohmic region with an inductively coupled plasma（ICP） method,an Al layer is sputtered as an ohmic electrode.The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 ℃ in N2 ambient for 1 min.The TiN gate leakage current is only 10^-8 A after the low-temperature ohmic process.The access region length of the self-aligned-gate（SAG） HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET.The output current density and transconductance of the device which has the same gate length and width are also increased.
11-5639/O4
AlGaN/GaN HFETs, wet etching, self-aligned-gate
Jia-Qi Zhang, Lei Wang, Liu-An Li, Qing-Peng Wang, Ying Jiang, Hui-Chao Zhu, Jin-Ping Ao（ 1 Institute of Technology and Science, Tokushima University, Tokushima, 770-8506, Japan;2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, China; 3 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/8/087308