敖金平, 张. 王. 李. 王. 江. 朱. (2016). Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate. Chinese physics B, 25(8), 357-360. https://doi.org/10.1088/1674-1056/25/8/087308
Chicago Style (17th ed.) Citation敖金平, 张家琦 王磊 李柳暗 王青鹏 江滢 朱慧超. "Self-aligned-gate AlGaN/GaN Heterostructure Field-effect Transistor with Titanium Nitride Gate." Chinese Physics B 25, no. 8 (2016): 357-360. https://doi.org/10.1088/1674-1056/25/8/087308.
MLA (9th ed.) Citation敖金平, 张家琦 王磊 李柳暗 王青鹏 江滢 朱慧超. "Self-aligned-gate AlGaN/GaN Heterostructure Field-effect Transistor with Titanium Nitride Gate." Chinese Physics B, vol. 25, no. 8, 2016, pp. 357-360, https://doi.org/10.1088/1674-1056/25/8/087308.
Warning: These citations may not always be 100% accurate.