Modeling and Measurement of Thermal-Mechanical-Stress-Creep Effect for RF MEMS Switch Up to 200 °C

• Published in: Micromachines (Basel) Vol. 13; no. 2; p. 166
• Main Authors: Zhang, Yulong, Sun, Jianwen, Liu, Huiliang, Liu, Zewen
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 22.01.2022; MDPI
• Subjects: cantilever; Creep (materials); Deformation; Gold; Grain growth; High temperature; Ion beams; Materials selection; Microelectromechanical systems; package temperature; Radio frequency; RF MEMS; Room temperature; Simulation; Thermal expansion; thermal process; thermal–mechanical-stress-creep effect; Viscoelasticity; cantilever; RF MEMS; package temperature; thermal process; thermal–mechanical-stress-creep effect

High-temperature processes, such as packaging and annealing, are challenges for Radio-Frequency Micro-Electro-Mechanical-Systems (RF MEMS) structures, which could lead to device failure. Coefficient of thermal expansion (CTE) mismatch and the material's creep effect affect the fabrication and p...