Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory - Roy, G.; Ghetti, A.; Benvenuti, A.; Erlebach, A.; Asenov, A. (IEEE transactions on electron devices, 2011)
Keywords: Applied sciences; Computational modeling; Correlation; Design. Technologies. Operation analysis. Testing; Doping; Electronics; Exact sciences and technology; Flash; floating gate (FG); impedance-field method (IFM); Integrated circuits; Integrated circuits by function (including memories and processors); interface trapped charge (ITC); line edge roughness (LER); Logic gates; Nonvolatile memory; nonvolatile memory (NVM); oxide thickness fluctuations (OTF); polysilicon granularity (PSG); random discrete dopants (RDD); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid modeling; Studies; Threshold voltage; variability; Voltage threshold; oxide thickness fluctuations (OTF); random discrete dopants (RDD); Statistical distribution; Oxide layer; Polycrystal; Roughness; variability; Floating gate technology; impedance-field method (IFM); polysilicon granularity (PSG); Thickness; Statistical method; interface trapped charge (ITC); Non volatile memory; nonvolatile memory (NVM); floating gate (FG); line edge roughness (LER); Integrated circuit; Numerical simulation; Silicon; Impedance; Flash; Comparative study