APA (7th ed.) Citation

Roy, G., Ghetti, A., Benvenuti, A., Erlebach, A., & Asenov, A. (2011). Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory. IEEE transactions on electron devices, 58(12), 4155-4163. https://doi.org/10.1109/TED.2011.2167511

Chicago Style (17th ed.) Citation

Roy, G., A. Ghetti, A. Benvenuti, A. Erlebach, and A. Asenov. "Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory." IEEE Transactions on Electron Devices 58, no. 12 (2011): 4155-4163. https://doi.org/10.1109/TED.2011.2167511.

MLA (9th ed.) Citation

Roy, G., et al. "Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory." IEEE Transactions on Electron Devices, vol. 58, no. 12, 2011, pp. 4155-4163, https://doi.org/10.1109/TED.2011.2167511.