Interaction-Driven Metal-Insulator Transition with Charge Fractionalization
It has been proposed that an extended version of the Hubbard model which potentially hosts rich correlated physics may be well simulated by the transition metal dichalcogenide (TMD) moiré heterostructures. Motivated by recent reports of continuous metal-insulator transition (MIT) at half filling, as...
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Published in | Physical review. X Vol. 12; no. 2; p. 021067 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
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American Physical Society
01.06.2022
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Abstract | It has been proposed that an extended version of the Hubbard model which potentially hosts rich correlated physics may be well simulated by the transition metal dichalcogenide (TMD) moiré heterostructures. Motivated by recent reports of continuous metal-insulator transition (MIT) at half filling, as well as correlated insulators at various fractional fillings in TMD moiré heterostructures, we propose a theory for the potentially continuous MIT with fractionalized electric charges. The charge fractionalization at the MIT will lead to various experimental observable effects, such as a large resistivity as well as large universal resistivity jump at the continuous MIT. These predictions are different from previously proposed theory for interaction-driven continuous MIT. Physics in phases near the MIT will also be discussed. |
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AbstractList | It has been proposed that an extended version of the Hubbard model which potentially hosts rich correlated physics may be well simulated by the transition metal dichalcogenide (TMD) moiré heterostructures. Motivated by recent reports of continuous metal-insulator transition (MIT) at half filling, as well as correlated insulators at various fractional fillings in TMD moiré heterostructures, we propose a theory for the potentially continuous MIT with fractionalized electric charges. The charge fractionalization at the MIT will lead to various experimental observable effects, such as a large resistivity as well as large universal resistivity jump at the continuous MIT. These predictions are different from previously proposed theory for interaction-driven continuous MIT. Physics in phases near the MIT will also be discussed. |
ArticleNumber | 021067 |
Author | Wu, Xiao-Chuan Luo, Zhu-Xi Xu, Yichen Ye, Mengxing Xu, Cenke Jian, Chao-Ming |
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CitedBy_id | crossref_primary_10_1038_s41467_022_32037_1 crossref_primary_10_1103_PhysRevX_12_041015 crossref_primary_10_1103_PhysRevB_106_195128 crossref_primary_10_1103_PhysRevB_106_155145 crossref_primary_10_1103_PhysRevLett_130_066301 crossref_primary_10_1103_PhysRevB_106_155131 crossref_primary_10_1103_PhysRevB_109_195108 crossref_primary_10_1103_PhysRevB_106_235148 crossref_primary_10_1103_PhysRevB_109_085143 |
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SubjectTerms | Chalcogenides Correlation Critical point Current carriers Electric charge Electrical resistivity Heterostructures Insulators Kinetic energy Metal-insulator transition Phase transitions Physics Transition metal compounds Transport properties Unit cell |
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Title | Interaction-Driven Metal-Insulator Transition with Charge Fractionalization |
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