Solution processable high-performance infrared organic photodetector by iodine doping
Solution processable high-performance, large-area, low-cost infrared organic photodetectors (OPDs) have been receiving more and more attention for their important applications both in scientific and technological fields. The search for a simple method to upgrade device performance for OPDs becomes i...
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| Published in | RSC advances Vol. 6; no. 51; pp. 45166 - 45171 |
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| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.01.2016
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| Subjects | |
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| Abstract | Solution processable high-performance, large-area, low-cost infrared organic photodetectors (OPDs) have been receiving more and more attention for their important applications both in scientific and technological fields. The search for a simple method to upgrade device performance for OPDs becomes increasingly important. Here, the performance of an OPD in the near-infrared (NIR) region is tremendously improved by doping iodine into the device's active layer (P3HT:PCBM:I
2
), 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film and result in a ∼11 000-fold increase in responsivity for the detector. A high detectivity (
D
*) of ∼1.6 × 10
12
cm Hz
1/2
W
−1
, a good specific responsivity (
R
) of ∼80 A W
−1
and a large EQE (external quantum efficiency) of 120% are achieved under illumination (
λ
= 850 nm) at room temperature. Systematic characterizations reveal that iodine-doping can introduce acceptor states in the energy band gap for the polymer layer, and thus increase the harvesting to long wavelength photons. A small dose of iodine doping can significantly induce improvement in device performance. This work demonstrates a simple but feasible method to enhance an NIR optoelectronics device.
A high-performance IR OPV detector has been fabricated, 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film thus result in the ∼11 000-fold increase in responsivity for the detector. |
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| AbstractList | Solution processable high-performance, large-area, low-cost infrared organic photodetectors (OPDs) have been receiving more and more attention for their important applications both in scientific and technological fields. The search for a simple method to upgrade device performance for OPDs becomes increasingly important. Here, the performance of an OPD in the near-infrared (NIR) region is tremendously improved by doping iodine into the device's active layer (P3HT:PCBM:I₂), 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film and result in a ∼11 000-fold increase in responsivity for the detector. A high detectivity (D*) of ∼1.6 × 10¹² cm Hz¹/² W⁻¹, a good specific responsivity (R) of ∼80 A W⁻¹ and a large EQE (external quantum efficiency) of 120% are achieved under illumination (λ = 850 nm) at room temperature. Systematic characterizations reveal that iodine-doping can introduce acceptor states in the energy band gap for the polymer layer, and thus increase the harvesting to long wavelength photons. A small dose of iodine doping can significantly induce improvement in device performance. This work demonstrates a simple but feasible method to enhance an NIR optoelectronics device. Solution processable high-performance, large-area, low-cost infrared organic photodetectors (OPDs) have been receiving more and more attention for their important applications both in scientific and technological fields. The search for a simple method to upgrade device performance for OPDs becomes increasingly important. Here, the performance of an OPD in the near-infrared (NIR) region is tremendously improved by doping iodine into the device's active layer (P3HT:PCBM:I sub(2)), 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film and result in a similar to 11 000-fold increase in responsivity for the detector. A high detectivity (D*) of similar to 1.6 10 super(12) cm Hz super(1/2) W super(-1), a good specific responsivity (R) of similar to 80 A W super(-1) and a large EQE (external quantum efficiency) of 120% are achieved under illumination ( lambda = 850 nm) at room temperature. Systematic characterizations reveal that iodine-doping can introduce acceptor states in the energy band gap for the polymer layer, and thus increase the harvesting to long wavelength photons. A small dose of iodine doping can significantly induce improvement in device performance. This work demonstrates a simple but feasible method to enhance an NIR optoelectronics device. Solution processable high-performance, large-area, low-cost infrared organic photodetectors (OPDs) have been receiving more and more attention for their important applications both in scientific and technological fields. The search for a simple method to upgrade device performance for OPDs becomes increasingly important. Here, the performance of an OPD in the near-infrared (NIR) region is tremendously improved by doping iodine into the device's active layer (P3HT:PCBM:I 2 ), 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film and result in a ∼11 000-fold increase in responsivity for the detector. A high detectivity ( D *) of ∼1.6 × 10 12 cm Hz 1/2 W −1 , a good specific responsivity ( R ) of ∼80 A W −1 and a large EQE (external quantum efficiency) of 120% are achieved under illumination ( λ = 850 nm) at room temperature. Systematic characterizations reveal that iodine-doping can introduce acceptor states in the energy band gap for the polymer layer, and thus increase the harvesting to long wavelength photons. A small dose of iodine doping can significantly induce improvement in device performance. This work demonstrates a simple but feasible method to enhance an NIR optoelectronics device. A high-performance IR OPV detector has been fabricated, 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film thus result in the ∼11 000-fold increase in responsivity for the detector. Solution processable high-performance, large-area, low-cost infrared organic photodetectors (OPDs) have been receiving more and more attention for their important applications both in scientific and technological fields. The search for a simple method to upgrade device performance for OPDs becomes increasingly important. Here, the performance of an OPD in the near-infrared (NIR) region is tremendously improved by doping iodine into the device's active layer (P3HT:PCBM:I 2 ), 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film and result in a ∼11 000-fold increase in responsivity for the detector. A high detectivity ( D *) of ∼1.6 × 10 12 cm Hz 1/2 W −1 , a good specific responsivity ( R ) of ∼80 A W −1 and a large EQE (external quantum efficiency) of 120% are achieved under illumination ( λ = 850 nm) at room temperature. Systematic characterizations reveal that iodine-doping can introduce acceptor states in the energy band gap for the polymer layer, and thus increase the harvesting to long wavelength photons. A small dose of iodine doping can significantly induce improvement in device performance. This work demonstrates a simple but feasible method to enhance an NIR optoelectronics device. |
| Author | Tian, Pin Li, Yanhui Yang, Chunzhang Ji, Rongbin Kong, Jincheng Zhao, Jun Xiang, Jinzhong Tang, Libin Sun, Zhenhua Ping Lau, Shu Lai, Sin Ki |
| AuthorAffiliation | School of Materials Science and Engineering The Hong Kong Polytechnic University College of Optoelectronic Engineering Department of Applied Physics Shenzhen University Yunnan University Kunming Institute of Physics |
| AuthorAffiliation_xml | – sequence: 0 name: Kunming Institute of Physics – sequence: 0 name: School of Materials Science and Engineering – sequence: 0 name: Shenzhen University – sequence: 0 name: The Hong Kong Polytechnic University – sequence: 0 name: College of Optoelectronic Engineering – sequence: 0 name: Yunnan University – sequence: 0 name: Department of Applied Physics |
| Author_xml | – sequence: 1 givenname: Pin surname: Tian fullname: Tian, Pin – sequence: 2 givenname: Libin surname: Tang fullname: Tang, Libin – sequence: 3 givenname: Jinzhong surname: Xiang fullname: Xiang, Jinzhong – sequence: 4 givenname: Zhenhua surname: Sun fullname: Sun, Zhenhua – sequence: 5 givenname: Rongbin surname: Ji fullname: Ji, Rongbin – sequence: 6 givenname: Sin Ki surname: Lai fullname: Lai, Sin Ki – sequence: 7 givenname: Shu surname: Ping Lau fullname: Ping Lau, Shu – sequence: 8 givenname: Jincheng surname: Kong fullname: Kong, Jincheng – sequence: 9 givenname: Jun surname: Zhao fullname: Zhao, Jun – sequence: 10 givenname: Chunzhang surname: Yang fullname: Yang, Chunzhang – sequence: 11 givenname: Yanhui surname: Li fullname: Li, Yanhui |
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| Notes | 10.1039/c6ra02773c Electronic supplementary information (ESI) available: The ellipsometric spectra of the doped and undoped P3HT:PCBM films. See DOI ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| SubjectTerms | absorption ambient temperature Devices Doping Infrared Iodine lighting near-infrared spectroscopy Optoelectronic devices Photodetectors photons polymers Receiving Searching wavelengths |
| Title | Solution processable high-performance infrared organic photodetector by iodine doping |
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