The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization

• Published in: NPG Asia materials Vol. 16; no. 1; pp. 1 - 10
• Main Authors: Hu, Chen-Yu, Chen, Wei-De, Liu, Yan-Ting, Huang, Chao-Chung, Pai, Chi-Feng
• Format: Journal Article
• Language: English
• Published: Tokyo Nature Publishing Group 12.01.2024; Nature Portfolio
• Subjects: Anisotropy; Broken symmetry; Current density; Damping; Electronic systems; Ferromagnetism; Hall effect; Heterostructures; Magnetic anisotropy; Magnetic fields; Magnetic switching; Magnetization; R&D; Random access memory; Research & development; Torque

Abstract The discovery of efficient magnetization switching upon device activation by spin Hall effect (SHE)-induced spin–orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for electronic systems with perpendicular magnetic anisotropy (PM...