Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary

Abstract Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atom...

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Bibliographic Details
Published inNational science review Vol. 7; no. 4; pp. 755 - 762
Main Authors Li, Xujing, Yin, Li, Lai, Zhengxun, Wu, Mei, Sheng, Yu, Zhang, Lei, Sun, Yuanwei, Chen, Shulin, Li, Xiaomei, Zhang, Jingmin, Li, Yuehui, Liu, Kaihui, Wang, Kaiyou, Yu, Dapeng, Bai, Xuedong, Mi, Wenbo, Gao, Peng
Format Journal Article
LanguageEnglish
Published Oxford University Press 01.04.2020
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