Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary
Abstract Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atom...
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Published in | National science review Vol. 7; no. 4; pp. 755 - 762 |
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Main Authors | , , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Oxford University Press
01.04.2020
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Subjects | |
Online Access | Get full text |
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