400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes - Chang, S.J.; Kuo, C.H.; Su, Y.K.; Wu, L.W.; Sheu, J.K.; Wen, T.C.; Lai, W.C.; Chen, J.R.; Tsai, J.M. (IEEE journal of selected topics in quantum electronics, 2002)
Keywords: Aluminum gallium nitride; Barrier layers; Carrier confinement; Crystalline materials; Crystals; Current carriers; Degradation; Electroluminescence; Epitaxial growth; Epitaxial layers; Injection current; Leakage current; Light emitting diodes; Quantum well devices; Vapor phase epitaxy