Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V

• Published in: IEEE microwave and wireless components letters Vol. 16; no. 4; pp. 170 - 172
• Main Authors: O'Sullivan, J.A., McCarthy, K.G., Murphy, A.C., Murphy, P.J.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2006; Institute of Electrical and Electronics Engineers
• Subjects: Amplifiers; Applied sciences; BiCMOS integrated circuits; Circuit properties; Class E/F; Design. Technologies. Operation analysis. Testing; Electric potential; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Germanium silicon alloys; heterojunction bipolar transistor (HBT); Heterojunction bipolar transistors; Integrated circuits; Low voltage; Microwaves; Power amplifiers; Power measurement; RFIC power amplifier (PA); Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon germanides; Silicon germanium; Switches; Thermal conductivity; Transceivers; Voltage; Performance evaluation; Semiconductor alloys; Class E; RFIC power amplifier (PA); Class F; Power supply; BiCMOS technology; Low voltage; Class E/F; Radiofrequency integrated circuits; Heterojunction bipolar transistors; Power amplifier; heterojunction bipolar transistor (HBT)
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2006.872144

This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8V. At 1V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.