Colloid aspects of chemical–mechanical planarization

• Published in: Journal of colloid and interface science Vol. 320; no. 1; pp. 219 - 237
• Main Authors: Matijević, E., Babu, S.V.
• Format: Journal Article
• Language: English
• Published: San Diego, CA Elsevier Inc 01.04.2008; Elsevier
• Subjects: Abrasive; Adhesion of particle slurries; Chemistry; Colloidal state and disperse state; Copper dissolution; Exact sciences and technology; General and physical chemistry; Planarization; Polishing wafers; Surface physical chemistry; Abrasive; Planarization; Adhesion of particle slurries; Copper dissolution; Polishing wafers; Particle; Transition metal; Copper; Adhesion; Dissolution; Colloid; Wafer

The essential parts of interconnects for silicon based logic and memory devices consist of metal wiring (e.g. copper), a barrier metal (Ta, TaN), and of insulation (SiO 2, low- k polymer). The deposition of the conducting metal cannot be confined to trenches, resulting in additional coverage of Cu a...