Diethynyl naphthalene derivatives with high ionization potentials for p-channel and n-channel organic field-effect transistors

• Published in: Journal of physics. D, Applied physics Vol. 40; no. 15; pp. 4471 - 4475
• Main Authors: Yasuda, Takeshi, Kashiwagi, Kimiaki, Morizawa, Yoshitomi, Tsutsui, Tetsuo
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 07.08.2007; Institute of Physics
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; High strength current; High field effects; Hole mobility; n channel; X ray diffraction; Optimization; Thin film; Field effect transistor; p channel; Manufacturing process; p type semiconductor; n type semiconductor; Electron mobility; Organic semiconductors; Ionization potential; Organic electronics
• DOI: 10.1088/0022-3727/40/15/014
• ISSN: 0022-3727

We have developed and characterized diethynyl naphthalene derivatives with high ionization potentials, 2,6-bis [(naphthalen-2-yl)ethynyl]-naphthalene (BH-202) and 2,6-bis[(heptafluoronaphthalen-2-yl)ethynyl]-naphthalene (BF-202) for new organic semiconductors. Using x-ray diffraction, we have found that thin films of the two organic semiconductors have a high degree of molecular order. Organic field-effect transistors (OFETs) with BH-202 films showed p-type characteristics. By the optimization of the fabrication process, the device exhibited a high field-effect hole mobility up to 0.12 cm2 V-1 s-1 and a high on/off current ratio of 3.3 X 105. On the other hand, OFETs with BF-202 films showed n-type characteristics. The field-effect electron mobility was calculated to be 3.4 X 10-3 cm2 V-1 s-1 and the on/off current ratio was 5.4 X 103.