A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500 °C in Air

This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequen...

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Published inSensors (Basel, Switzerland) Vol. 21; no. 1; p. 149
Main Authors Eisner, Savannah R., Chapin, Cailin A., Lu, Ruochen, Yang, Yansong, Gong, Songbin, Senesky, Debbie G.
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 29.12.2020
MDPI
Subjects
Acoustics
high-temperature
Letter
lithium niobate
Microelectromechanical systems
piezoelectric resonators
RF MEMS
Sensors
SH0 mode
Signal processing
Thin films
United States > US
SH0 mode
lithium niobate
RF MEMS
piezoelectric resonators
high-temperature
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Abstract This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a −3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be −95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and −95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.
AbstractList This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a -3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be -95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and -95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a -3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be -95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and -95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.
This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a −3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be −95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and −95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.
This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO ; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor ( ) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a -3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be -95.27 ppm/°C and 57.5 ppb/°C for resonant mode A, and -95.43 ppm/°C and 55.8 ppb/°C for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient ( ) were extracted and are reported. Device decreased to 334 and total increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.
This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO 3 ; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor ( Q ) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a −3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be −95.27 ppm/°C and 57.5 ppb/°C 2 for resonant mode A, and −95.43 ppm/°C and 55.8 ppb/°C 2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient ( k t 2 ) were extracted and are reported. Device Q decreased to 334 and total k t 2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.
Author Eisner, Savannah R.
Gong, Songbin
Lu, Ruochen
Chapin, Cailin A.
Yang, Yansong
Senesky, Debbie G.
AuthorAffiliation 1 Department of Electrical Engineering, Stanford University, 350 Serra Mall, Stanford, CA 94305, USA
2 Department of Aeronautics and Astronautics, Stanford University, 496 Lomita Mall, Stanford, CA 94305, USA; cchapin3@stanford.edu (C.A.C.); dsenesky@stanford.edu (D.G.S.)
3 Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 306 N Wright St, Urbana, IL 61801, USA; rlu10@illinois.edu (R.L.); yyang165@illinois.edu (Y.Y.); songbin@illinois.edu (S.G.)
AuthorAffiliation_xml – name: 2 Department of Aeronautics and Astronautics, Stanford University, 496 Lomita Mall, Stanford, CA 94305, USA; cchapin3@stanford.edu (C.A.C.); dsenesky@stanford.edu (D.G.S.)
– name: 1 Department of Electrical Engineering, Stanford University, 350 Serra Mall, Stanford, CA 94305, USA
– name: 3 Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 306 N Wright St, Urbana, IL 61801, USA; rlu10@illinois.edu (R.L.); yyang165@illinois.edu (Y.Y.); songbin@illinois.edu (S.G.)
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BackLink https://www.ncbi.nlm.nih.gov/pubmed/33383685$$D View this record in MEDLINE/PubMed
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Keywords SH0 mode
lithium niobate
RF MEMS
piezoelectric resonators
high-temperature
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Snippet This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C...
This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO ; LN) MEMS resonator array up to 500 °C...
This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO 3 ; LN) MEMS resonator array up to 500 °C...
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SubjectTerms Acoustics
high-temperature
Letter
lithium niobate
Microelectromechanical systems
piezoelectric resonators
RF MEMS
Sensors
SH0 mode
Signal processing
Thin films
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Title A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500 °C in Air
URI https://www.ncbi.nlm.nih.gov/pubmed/33383685
https://www.proquest.com/docview/2474609310
https://www.proquest.com/docview/2474499546
https://pubmed.ncbi.nlm.nih.gov/PMC7795216
https://doaj.org/article/fd1115035dd3419d982db95485c48c4d
Volume 21
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