Void-free Copper Electrodeposition in High Aspect Ratio, Full Wafer Thickness Through-Silicon Vias with Endpoint Detection

• Published in: Journal of the Electrochemical Society Vol. 167; no. 16; pp. 162517 - 162523
• Main Authors: Schmitt, Rebecca P., Menk, Lyle A., Baca, Ehren, Bower, John Eric, Romero, Joseph A., Jordan, Matthew B., Jackson, Nathan, Hollowell, Andrew E.
• Format: Journal Article
• Language: English
• Published: United States IOP Publishing 01.12.2020; The Electrochemical Society
• Subjects: ENGINEERING

High density interconnects are required for increased input/output for microelectronics applications, incentivizing the development of Cu electrochemical deposition (ECD) processes for high aspect ratio through-silicon vias (TSVs). This work outlines Cu ECD processes for 62.5 m diameter TSVs, etched...