In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controver...
Saved in:
Published in | Nature communications Vol. 4; no. 1; p. 2382 |
---|---|
Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
06.09.2013
Nature Publishing Group |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!