In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controver...

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Published inNature communications Vol. 4; no. 1; p. 2382
Main Authors Park, Gyeong-Su, Kim, Young Bae, Park, Seong Yong, Li, Xiang Shu, Heo, Sung, Lee, Myoung-Jae, Chang, Man, Kwon, Ji Hwan, Kim, M., Chung, U-In, Dittmann, Regina, Waser, Rainer, Kim, Kinam
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 06.09.2013
Nature Publishing Group
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