2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts

• Published in: Advanced materials interfaces Vol. 9; no. 35
• Main Authors: Chen, Jinping, Zhang, Zhen, Feng, Jiying, Xie, Xiaoyu, Jian, Aoqun, Li, Yuanzheng, Guo, Heng, Zhu, Yizhi, Li, Zhuxin, Dong, Jianqi, Cui, Qiannan, Shi, Zengliang, Xu, Chunxiang
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.12.2022; Wiley-VCH
• Subjects: 2D InSe; Asymmetry; Broadband; Electrodes; Heterostructures; Indium selenides; Optoelectronic devices; Photometers; photoresponse; Response time; Schottky barrier; self‐powered photodetector

Self‐powered photodetectors (SPPDs) are generally carried out in multilayered heterostructures with different semiconductors or in Schottky junctions with different metal electrodes. It is interesting to build an SPPD using metal–semiconductor–metal (MSM) structures with the same type of metal elect...