Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes

• Published in: Physica status solidi. A, Applications and materials science Vol. 215; no. 8
• Main Authors: Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 21.04.2018
• Subjects: AlGaN; Aluminum gallium nitrides; deep‐UV LEDs; Efficiency; Electrodes; external quantum efficiency; Injection current; Light emitting diodes; Nickel; Organic light emitting diodes; Quantum efficiency; Quantum wells; reflective electrodes; Thickness; Ultraviolet radiation

AlGaN‐based deep‐ultraviolet light‐emitting diodes (DUV LEDs) have a wide range of applications and a large market is expected. However, the efficiency of DUV LEDs is still much lower than that of blue LEDs due to the quite low light‐extraction efficiency (LEE). We are developing high LEE DUV LEDs b...