Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

• Published in: Physica status solidi. PSS-RRL. Rapid research letters Vol. 13; no. 9
• Main Authors: Wang, Hong, Yan, Xiaobing
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.09.2019
• Subjects: Endurance; Field of view; filament mechanism; Functional materials; materials design; Metallizing; Optimization; performance optimization; Power consumption; Random access memory; resistive random access memory

Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory (RRAM) gradually enters the field of view due to its simple structure, fast program/erase speed, low power consumption, and so on. This review article summarizes the materials,...