An Ultraviolet–Visible and Near‐Infrared‐Responded Broadband NIR Phosphor and Its NIR Spectroscopy Application
High‐radiance near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are demanded for wearable biosensing devices and the properties of these pc‐LEDs are highly dependent on the performance of the NIR phosphor. An ultraviolet–visible and NIR‐responded broadband NIR NaScGe2O6:Cr3+ pho...
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| Published in | Advanced optical materials Vol. 8; no. 8 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Weinheim
Wiley Subscription Services, Inc
01.04.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | High‐radiance near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are demanded for wearable biosensing devices and the properties of these pc‐LEDs are highly dependent on the performance of the NIR phosphor. An ultraviolet–visible and NIR‐responded broadband NIR NaScGe2O6:Cr3+ phosphor is reported. Under 490 nm excitation, NaScGe2O6:Cr3+ shows broad emission band from 700 to 1250 nm, which covers the first and second NIR windows. An NIR pc‐LED with radiant flux of 12.07 mW@350 mA is realized based on NaScGe2O6:Cr3+ and 450 nm blue LED chip. The ability of high‐power NIR light of the NIR pc‐LED to penetrate human tissues is observed successfully. Additionally, in NaScGe2O6:Cr3+, the luminescence performance of Cr3+ under 808 nm laser excitation is achieved for the first time.
A broadband near‐infrared (NIR) emission phosphor NaScGe2O6:Cr3+ with super‐wide response range is developed. The high‐power NIR phosphor‐converted light‐emitting diode is prepared and the ability of the high‐power NIR light to penetrate human tissues is observed successfully. In addition, the luminescence performance of Cr3+ under 808 nm laser excitation is achieved for the first time in NaScGe2O6:Cr3+. |
|---|---|
| AbstractList | High‐radiance near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are demanded for wearable biosensing devices and the properties of these pc‐LEDs are highly dependent on the performance of the NIR phosphor. An ultraviolet–visible and NIR‐responded broadband NIR NaScGe
2
O
6
:Cr
3+
phosphor is reported. Under 490 nm excitation, NaScGe
2
O
6
:Cr
3+
shows broad emission band from 700 to 1250 nm, which covers the first and second NIR windows. An NIR pc‐LED with radiant flux of 12.07 mW@350 mA is realized based on NaScGe
2
O
6
:Cr
3+
and 450 nm blue LED chip. The ability of high‐power NIR light of the NIR pc‐LED to penetrate human tissues is observed successfully. Additionally, in NaScGe
2
O
6
:Cr
3+
, the luminescence performance of Cr
3+
under 808 nm laser excitation is achieved for the first time. High‐radiance near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are demanded for wearable biosensing devices and the properties of these pc‐LEDs are highly dependent on the performance of the NIR phosphor. An ultraviolet–visible and NIR‐responded broadband NIR NaScGe2O6:Cr3+ phosphor is reported. Under 490 nm excitation, NaScGe2O6:Cr3+ shows broad emission band from 700 to 1250 nm, which covers the first and second NIR windows. An NIR pc‐LED with radiant flux of 12.07 mW@350 mA is realized based on NaScGe2O6:Cr3+ and 450 nm blue LED chip. The ability of high‐power NIR light of the NIR pc‐LED to penetrate human tissues is observed successfully. Additionally, in NaScGe2O6:Cr3+, the luminescence performance of Cr3+ under 808 nm laser excitation is achieved for the first time. A broadband near‐infrared (NIR) emission phosphor NaScGe2O6:Cr3+ with super‐wide response range is developed. The high‐power NIR phosphor‐converted light‐emitting diode is prepared and the ability of the high‐power NIR light to penetrate human tissues is observed successfully. In addition, the luminescence performance of Cr3+ under 808 nm laser excitation is achieved for the first time in NaScGe2O6:Cr3+. High‐radiance near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are demanded for wearable biosensing devices and the properties of these pc‐LEDs are highly dependent on the performance of the NIR phosphor. An ultraviolet–visible and NIR‐responded broadband NIR NaScGe2O6:Cr3+ phosphor is reported. Under 490 nm excitation, NaScGe2O6:Cr3+ shows broad emission band from 700 to 1250 nm, which covers the first and second NIR windows. An NIR pc‐LED with radiant flux of 12.07 mW@350 mA is realized based on NaScGe2O6:Cr3+ and 450 nm blue LED chip. The ability of high‐power NIR light of the NIR pc‐LED to penetrate human tissues is observed successfully. Additionally, in NaScGe2O6:Cr3+, the luminescence performance of Cr3+ under 808 nm laser excitation is achieved for the first time. |
| Author | Li, Junyi Ding, Jianyan Geng, Wanying Wang, Yichao Zhou, Xufeng Wang, Yuhua |
| Author_xml | – sequence: 1 givenname: Xufeng surname: Zhou fullname: Zhou, Xufeng organization: Lanzhou University – sequence: 2 givenname: Wanying surname: Geng fullname: Geng, Wanying organization: Lanzhou University – sequence: 3 givenname: Junyi surname: Li fullname: Li, Junyi organization: Lanzhou University – sequence: 4 givenname: Yichao surname: Wang fullname: Wang, Yichao organization: Lanzhou University – sequence: 5 givenname: Jianyan surname: Ding fullname: Ding, Jianyan organization: Lanzhou University – sequence: 6 givenname: Yuhua surname: Wang fullname: Wang, Yuhua email: wyh@lzu.edu.cn organization: Lanzhou University |
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| Snippet | High‐radiance near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are demanded for wearable biosensing devices and the properties of these... |
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| SubjectTerms | 808 nm excitation Broadband broadband near‐infrared emission chromium doping Excitation Huang–Rhys factor Human tissues Infrared radiation Light emitting diodes Materials science Optics Phosphors Radiance Radiant flux Trivalent chromium Windows (computer programs) |
| Title | An Ultraviolet–Visible and Near‐Infrared‐Responded Broadband NIR Phosphor and Its NIR Spectroscopy Application |
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